发明授权
US07294555B2 Method of forming trench in semiconductor device using polish stop layer and anti-reflection coating
失效
使用抛光停止层和防反射涂层在半导体器件中形成沟槽的方法
- 专利标题： Method of forming trench in semiconductor device using polish stop layer and anti-reflection coating
- 专利标题（中）： 使用抛光停止层和防反射涂层在半导体器件中形成沟槽的方法
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申请号： US10722295申请日： 2003-11-25
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公开(公告)号： US07294555B2公开(公告)日： 2007-11-13
- 发明人: Young-Hun Seo
- 申请人： Young-Hun Seo
- 申请人地址： KR Seoul
- 专利权人： Dongbu Electronics Co., Ltd.
- 当前专利权人： Dongbu Electronics Co., Ltd.
- 当前专利权人地址： KR Seoul
- 代理商 Andrew D. Fortney
- 优先权： KR10-2002-0081990 20021220
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A method of forming a trench in a semiconductor device includes forming a polish stop layer on a semiconductor substrate. The polish stop layer and the semiconductor substrate are then etched to form a trench. The semiconductor substrate is etched to a predetermined depth. Also, etching is performed such that ends of the polish stop layer adjacent to the trench are rounded. Next, an insulation layer that fills the trench is formed.
公开/授权文献
- US20040121552A1 Method of forming trench in semiconductor device 公开/授权日：2004-06-24
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