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发明授权
US07294916B2 Semiconductor device with a thinned semiconductor chip and method for producing the thinned semiconductor chip 有权
具有减薄的半导体芯片的半导体器件和用于制造变薄的半导体芯片的方法

Semiconductor device with a thinned semiconductor chip and method for producing the thinned semiconductor chip
摘要：
A semiconductor device with a thinned semiconductor chip and a method for producing the latter is disclosed. In one embodiment, the thinned semiconductor chip has a top side with contact areas and a rear side with a rear side electrode. In this case, the rear side electrode is cohesively connected to a chip pad of a circuit carrier via an electrically conductive layer. In another embodiment, the thinned semiconductor chips of this semiconductor device according to the invention have low-microdefect edge side regions with semiconductor element structures and edge sides patterned by etching technology.
摘要（中）：

公开了一种具有薄型半导体芯片的半导体器件及其制造方法。 在一个实施例中，变薄的半导体芯片具有具有接触区域的顶侧和具有后侧电极的后侧。 在这种情况下，后侧电极经由导电层与电路载体的芯片焊盘粘结地连接。 在另一个实施例中，根据本发明的该半导体器件的薄化半导体芯片具有具有半导体元件结构和通过蚀刻技术图案化的边缘侧的低微细边缘侧区域。

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