发明授权
- 专利标题： Sputter-deposited rare earth element-doped silicon oxide film with silicon nanocrystals for electroluminescence applications
- 专利标题（中）： 溅射沉积的稀土元素掺杂氧化硅膜与硅纳米晶体用于电致发光应用
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申请号： US11334015申请日： 2006-01-18
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公开(公告)号： US07297642B2公开(公告)日： 2007-11-20
- 发明人: Wei Gao , Tingkai Li , Robert A. Barrowcliff , Yoshi Ono , Sheng Teng Hsu
- 申请人： Wei Gao , Tingkai Li , Robert A. Barrowcliff , Yoshi Ono , Sheng Teng Hsu
- 申请人地址： US WA Camas
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人地址： US WA Camas
- 代理机构： Law Office of Gerald Maliszewski
- 代理商 Gerald Maliszewski
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A method is provided for forming a rare earth (RE) element-doped silicon (Si) oxide film with nanocrystalline (nc) Si particles. The method comprises: providing a first target of Si, embedded with a first rare earth element; providing a second target of Si; co-sputtering the first and second targets; forming a Si-rich Si oxide (SRSO) film on a substrate, doped with the first rare earth element; and, annealing the rare earth element-doped SRSO film. The first target is doped with a rare earth element such as erbium (Er), ytterbium (Yb), cerium (Ce), praseodymium (Pr), or terbium (Tb). The sputtering power is in the range of about 75 to 300 watts (W). Different sputtering powers are applied to the two targets. Also, deposition can be controlled by varying the effective areas of the two targets. For example, one of the targets can be partially covered.
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