Invention Grant
US07297996B2 Semiconductor memory device for storing data in memory cells as complementary information
有权
用于将数据存储在存储器单元中作为补充信息的半导体存储器件
- Patent Title: Semiconductor memory device for storing data in memory cells as complementary information
- Patent Title (中): 用于将数据存储在存储器单元中作为补充信息的半导体存储器件
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Application No.: US11298515Application Date: 2005-12-12
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Publication No.: US07297996B2Publication Date: 2007-11-20
- Inventor: Ayako Sato , Masato Matsumiya , Satoshi Eto
- Applicant: Ayako Sato , Masato Matsumiya , Satoshi Eto
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Arent Fox, LLP
- Priority: JP2002-285061 20020930
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
A twin-cell type semiconductor memory device in which the area of a chip can be reduced. In the twin-cell type semiconductor memory device for storing data in at least one pair of memory cells as complementary information, memory cells are arranged at each of a plurality of word lines at intervals at which bit lines are located. At least the one pair of memory cells, which have stored the complementary information and which indicate a plurality of areas each connected to a pair of bit lines, form a twin cell.
Public/Granted literature
- US20060086951A1 Semiconductor memory device for storing data in memory cells as complementary information Public/Granted day:2006-04-27
Information query
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