发明授权
- 专利标题: Non-volatile memory device and associated method of erasure
- 专利标题(中): 非易失性存储器件及相关的擦除方法
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申请号: US11133234申请日: 2005-05-20
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公开(公告)号: US07298654B2公开(公告)日: 2007-11-20
- 发明人: Jae-Yong Jeong , Young-Ho Lim
- 申请人: Jae-Yong Jeong , Young-Ho Lim
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Volentine & Whitt, PLLC
- 优先权: KR10-2004-0099954 20041201
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
Disclosed is a non-volatile memory device and a method of erasing the non-volatile memory device. An erase voltage is simultaneously applied to a plurality of sectors contained in the non-volatile memory device. Then, erase validation is sequentially performed for each of the plurality sectors and results of the erase validation are stored in a plurality of pass information registers. According to the results stored in the pass information registers, sectors which were not successfully erased are simultaneously re-erased and then sequentially re-validated until no such “failed sectors” remain in the non-volatile memory device. Upon eliminating the “failed sectors” from the non-volatile memory device, a post-program operation is sequentially performed on each of the plurality of sectors.