- 专利标题： MIM capacitor structure and fabricating method thereof
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申请号： US10907448申请日： 2005-04-01
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公开(公告)号： US07300840B2公开(公告)日： 2007-11-27
- 发明人: Chun-Yi Lin , Chien-Chou Hung
- 申请人： Chun-Yi Lin , Chien-Chou Hung
- 申请人地址： TW Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242
摘要：
A method for fabricating an MIM capacitor is disclosed. First, a substrate is provided having a first dielectric layer thereon. Next at least one first damascene conductor is formed within the first dielectric layer, and a second dielectric layer with a capacitor opening is formed on the first dielectric layer, in which the capacitor opening is situated directly above the first damascene conductor. Next, an MIM capacitor having a top plate and a bottom plate is created within the capacitor opening, in which the bottom plate of the MIM capacitor is electrically connected to the first damascene conductor. Next, a third dielectric layer is deposited on the second dielectric layer and the MIM capacitor, and at least one second damascene conductor is formed within part of the third dielectric layer, in which the second damascene conductor is electrically connected to the top plate of the MIM capacitor.
公开/授权文献
- US20060223276A1 MIM capacitor structure and fabricating method thereof 公开/授权日：2006-10-05
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