发明授权
- 专利标题: Film formation apparatus and method for semiconductor process
- 专利标题(中): 用于半导体工艺的成膜装置和方法
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申请号: US11166073申请日: 2005-06-27
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公开(公告)号: US07300885B2公开(公告)日: 2007-11-27
- 发明人: Kazuhide Hasebe , Pao-Hwa Chou
- 申请人: Kazuhide Hasebe , Pao-Hwa Chou
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2004-190233 20040628; JP2005-048059 20050223
- 主分类号: H01L21/31
- IPC分类号: H01L21/31
摘要:
A film formation method for a semiconductor process is arranged to form a thin film on a target substrate by CVD, while supplying a first process gas for film formation and a second process gas for reacting with the first process gas to a process field accommodating the target substrate. The method alternately includes first to fourth steps. The first step performs supply of the first and second process gases to the process field. The second step stops supply of the first and second process gases to the process field. The third step performs supply of the second process gas to the process field while stopping supply of the first process gas to the process field. The fourth step stops supply of the first and second process gases to the process field.