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US07301887B2 Methods for erasing bit cells in a high density data storage device
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擦除高密度数据存储设备中的位单元的方法
- 专利标题: Methods for erasing bit cells in a high density data storage device
- 专利标题(中): 擦除高密度数据存储设备中的位单元的方法
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申请号: US11003955申请日: 2004-12-03
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公开(公告)号: US07301887B2公开(公告)日: 2007-11-27
- 发明人: Thomas F. Rust , Robert N. Stark , Thomas L. Noggle , Daniel F. Cribbs
- 申请人: Thomas F. Rust , Robert N. Stark , Thomas L. Noggle , Daniel F. Cribbs
- 申请人地址: US CA Fremont
- 专利权人: Nanochip, Inc.
- 当前专利权人: Nanochip, Inc.
- 当前专利权人地址: US CA Fremont
- 代理机构: Fliesler Meyer LLP
- 主分类号: G11B9/00
- IPC分类号: G11B9/00
摘要:
Methods in accordance with the present invention can be applied, in an embodiment, to a media comprising a phase change material to alter a resolved portion of the phase change material to have a resistance different from a resistance of the bulk material. A tip having a substantially larger radius of curvature than the resolved portion can be employed by applying such methods. A substantially anisotropic columnar material can focus a current applied between the tip and the media so that the portion is narrower in width than the radius of curvature. Such highly resolved portions form bits in the media. Other objects, aspects and advantages of the invention can be obtained from reviewing the figures, specification and claims. This description is not intended to be a complete description of, or limit the scope of, the invention.
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