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1.发明授权Devices and methods of detecting movement between media and probe tip in a probe data storage system 失效检测探头数据存储系统中介质和探针尖端之间移动的装置和方法公开(公告)号：US07391707B2
公开(公告)日：2008-06-24
申请号：US11670941
申请日：2007-02-02
发明人： Joanne P. Culver
IPC分类号： G11B9/00
CPC分类号： G11C13/0014 , G11B5/00 , G11B5/127 , G11B5/35 , G11B5/48 , G11B9/08 , G11B9/14 , G11B9/1418 , G11B9/1454 , G11B9/1472 , G11B9/149 , G11B2005/0002 , G11B2005/0005 , G11C13/02 , Y10S977/947
摘要： A memory apparatus comprises a media, a tip adapted to write information to and read information from said media, a media movement mechanism attached to said media and configured to move said media in response to media control signals, and a capacitive sensor configured to detect an amount of relative movement of said media and said tip in at least an x-axis direction. The capacitive sensor includes a fixed comb having fingers protruding in an x-axis direction, a moving comb connected having fingers protruding in an x-axis direction, and an electrical path connected to said fixed comb and an electrical path connected to said moving comb. The relative movement in at least the x-axis direction is determined at least in part on a change in capacitance between said fixed and moving combs of said capacitive sensor.
摘要翻译： 存储装置包括介质，适于向所述介质写入信息并从其读取信息的端头，附接到所述介质并被配置为响应于介质控制信号移动所述介质的介质移动机构，以及配置成检测 所述介质和所述尖端在至少x轴方向上的相对运动量。 电容式传感器包括具有在x轴方向上突出的指状物的固定梳，连接有指向x轴方向突出的指状物的移动梳，以及连接到所述固定梳的电路和连接到所述移动梳的电路。 至少部分地基于所述电容式传感器的所述固定和移动的梳子之间的电容变化确定至少x轴方向的相对运动。
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公开(公告)号：US07414953B2
公开(公告)日：2008-08-19
申请号：US11697275
申请日：2007-04-05
IPC分类号： G11B9/00
CPC分类号： G11B9/04 , G11B9/1436
摘要： A data storage device comprises a media including a memory layer within which are formable domains associated with information, and a conductive layer disposed over the memory layer, the conductive layer having anisotropically increased electrical conductivity in a thickness direction. A conductive tip contactable with the conductive layer is adapted to form domains within the memory layer and one of the conductive tip and the media is movable to access the memory layer.
摘要翻译： 一种数据存储装置，包括一个介质，其中存储层是与信息相关联的可形成域，以及设置在存储层上的导电层，该导电层在厚度方向具有各向异性增加的导电性。 可与导电层接触的导电尖端适于在存储层内形成畴，并且导电尖端和介质之一可移动以访问存储层。
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公开(公告)号：US06985377B2
公开(公告)日：2006-01-10
申请号：US10685045
申请日：2003-10-14
申请人： Thomas F. Rust
发明人： Thomas F. Rust
IPC分类号： G11C11/00
摘要： A media device includes a phase change media having altered resistivity where data is written to the media. The media includes an overcoat to reduce physical damage inflicted on the media from a device such as a cantilever tip in a molecular memory integrated circuit used to write to or read from the media. Data written to the media can be exist in multiple states, allowing digital and/or analog data to be stored on the media.
摘要翻译： 媒体设备包括具有改变的电阻率的相变媒体，其中数据被写入媒体。 介质包括外涂层，以减少在用于写入或从介质读取的分子存储器集成电路中的诸如悬臂尖端的装置对介质造成的物理损伤。 写入介质的数据可以以多种状态存在，从而允许将数字和/或模拟数据存储在介质上。
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4.发明授权Molecular memory medium and molecular memory disk drive for storing information using a tunnelling probe 失效分子记忆介质和分子存储磁盘驱动器，用于使用隧道探针存储信息
公开(公告)号：US5453970A
公开(公告)日：1995-09-26
申请号：US90664
申请日：1993-07-13
申请人： Thomas F. Rust , Joanne P. Culver
发明人： Thomas F. Rust , Joanne P. Culver
CPC分类号： G11C13/02 , B82B1/00 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G11B9/14 , G11B9/1418 , G11B9/1472 , G11B9/149 , G11C13/0014 , G01Q80/00 , Y10S977/861 , Y10S977/872 , Y10S977/943 , Y10S977/947
摘要： A molecular memory medium for storing digital bits at a density of several hundred million per square centimeter. The medium is read and written by a tunnelling probe, and comprises a plane surface and a means for moving the surface relative to the tunnelling probe. Arrayed on the surface are plural memory elements, each storing one bit, and having, relative to the surface, a first positional state and a second positional state, representing the first state and the second state, respectively, of the bit. The positional states are distinguished from one another by a difference in a tunnelling current in the tunnelling probe. The memory element is switched from one positional state to the other by an electrostatic force applied by the tunnelling probe. A molecular memory apparatus for reading such a molecular memory medium includes a tunnelling probe, a drive for moving the storage medium relative to the tunnelling probe, and a controller for positioning the tunnelling probe relative to the track and the surface. A voltage applying circuit applies a voltage to the tunnelling probe, and a circuit causes the voltage applying circuit to apply a first voltage to the tunnelling probe and measures the resulting tunnelling current that depends on the positional state of the memory element adjacent to the tunnelling probe. Finally, a circuit determines from the tunnelling current the digital state represented by the memory element adjacent to the tunnelling probe, and provides the determined digital state as an output bit.
摘要翻译： 用于以每平方厘米数亿的密度存储数字位的分子存储介质。 介质由隧道探针读取和写入，并且包括平面表面和用于相对于隧道探针移动表面的装置。 在表面上排列有多个存储元件，每个存储元件分别存储一位，并且相对于表面具有分别表示位的第一状态和第二状态的第一位置状态和第二位置状态。 通过隧道探针中的隧道电流的差异来区分位置状态。 通过隧道探针施加的静电力将存储元件从一个位置状态切换到另一位置状态。 用于读取这种分子存储介质的分子存储装置包括隧道探针，用于相对于隧道探针移动存储介质的驱动器，以及用于相对于轨道和表面定位隧道探针的控制器。 电压施加电路向隧道探针施加电压，并且电路使施加电压的电路向隧道探针施加第一电压，并测量取决于与隧道探针相邻的存储元件的位置状态的结果隧道电流 。 最后，电路根据隧道电流确定由与隧道探针相邻的存储元件表示的数字状态，并将所确定的数字状态提供为输出位。
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公开(公告)号：US20110120518A1
公开(公告)日：2011-05-26
申请号：US12911628
申请日：2010-10-25
申请人： Thomas F. Rust
发明人： Thomas F. Rust
IPC分类号： H01L31/042 , H01L31/028 , H01L31/0224 , H01L31/18 , H01L31/0236
CPC分类号： H01L31/1892 , H01L31/035281 , H01L31/042 , H01L31/0516 , H01L31/0682 , Y02E10/547
摘要： Photovoltaic cells can be manufactured using a pattern region that substantially covers the usable surface area of a crystalline workpiece. Bars can be etched into the workpiece that extend substantially the entire length of the workpiece. These bars then can be diced to form die or micro-tiles having a width substantially equal to the thickness of the workpiece, and having an edge ratio of about 20:1 or less. Such a process can maximize conversion area, thereby extracting more energy from a given volume of photovoltaic conversion material. Contacts can be placed on opposing edges of the die or micro-tiles to form photovoltaic cells, which in some embodiments can function regardless of orientation in a solar panel.
摘要翻译： 可以使用基本上覆盖结晶工件的可用表面积的图案区域来制造光伏电池。 棒可以被蚀刻到基本上延伸到工件的整个长度上的工件中。 然后可以对这些条进行切割，以形成具有基本上等于工件厚度的宽度的模具或微瓦，并且具有约20:1或更小的边比。 这样的过程可以最大化转换面积，从而从给定体积的光伏转换材料中提取更多的能量。 接触件可以放置在模具或微瓦片的相对边缘上以形成光伏电池，在一些实施例中，可以在太阳能电池板中的取向上起作用。
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公开(公告)号：US07301887B2
公开(公告)日：2007-11-27
申请号：US11003955
申请日：2004-12-03
IPC分类号： G11B9/00
CPC分类号： G11B9/149 , G11B9/04 , G11B9/1436
摘要： Methods in accordance with the present invention can be applied, in an embodiment, to a media comprising a phase change material to alter a resolved portion of the phase change material to have a resistance different from a resistance of the bulk material. A tip having a substantially larger radius of curvature than the resolved portion can be employed by applying such methods. A substantially anisotropic columnar material can focus a current applied between the tip and the media so that the portion is narrower in width than the radius of curvature. Such highly resolved portions form bits in the media. Other objects, aspects and advantages of the invention can be obtained from reviewing the figures, specification and claims. This description is not intended to be a complete description of, or limit the scope of, the invention.
摘要翻译： 根据本发明的方法可以在一个实施方案中应用于包含相变材料的介质，以改变相变材料的分辨部分以具有与散装材料的电阻不同的电阻。 通过应用这种方法，可以采用具有比分辨部分大得多的曲率半径的尖端。 基本上各向异性的柱状材料可以聚焦施加在尖端和介质之间的电流，使得该部分的宽度比曲率半径窄。 这种高度分辨的部分在媒体中形成位。 本发明的其它目的，方面和优点可以通过阅读附图，说明书和权利要求来获得。 本说明书不是对本发明的完整描述或限制本发明的范围。
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公开(公告)号：US06982898B2
公开(公告)日：2006-01-03
申请号：US10684883
申请日：2003-10-14
申请人： Thomas F. Rust
发明人： Thomas F. Rust
IPC分类号： G11C11/00
CPC分类号： G11C23/00 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11C13/0014
摘要： Memory devices in accordance with the present invention can comprise a molecular memory integrated circuit including a set of actuators capable of moving one or more platforms. In one embodiment the platforms can include either a memory device or a Molecular Array Read/Write Engine (MARE) with a cantilever system having at least one cantilever tip. When a first platform with a memory device is brought within close proximity of a second platform with a MARE, the actuators can position the cantilever tip to a specific location on the memory device. The tip of the cantilever can perform a number of functions to the memory device, including reading the state of the memory device or changing the state of the memory device. This description is not intended to be a complete description of, or limit the scope of, the invention.
摘要翻译： 根据本发明的存储器件可以包括分子存储器集成电路，其包括能够移动一个或多个平台的一组致动器。 在一个实施例中，平台可以包括具有至少一个悬臂尖端的悬臂系统的存储器件或分子阵列读/写引擎（MARE）。 当具有存储器件的第一平台被带到与MARE的第二平台紧邻时，致动器可将悬臂尖端定位到存储器件上的特定位置。 悬臂的尖端可以对存储器件执行许多功能，包括读取存储器件的状态或改变存储器件的状态。 本说明书不是对本发明的完整描述或限制本发明的范围。
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公开(公告)号：US20080165568A1
公开(公告)日：2008-07-10
申请号：US11958265
申请日：2007-12-17
申请人： Thomas F. Rust
发明人： Thomas F. Rust
IPC分类号： G11C11/00
CPC分类号： G11B9/1409 , B82Y10/00 , G11B5/00 , G11B5/127 , G11B9/14 , G11B9/1472 , G11B11/20 , G11B2005/0002 , G11B2005/0005
摘要： A device in accordance with embodiments of the present invention comprises a contact probe for high density data storage reading, writing, erasing, or rewriting. In one embodiment, the contact probe can include a silicon core having a conductive coating. Contact probes in accordance with the present invention can be applied to a phase change media, for example, to form an indicia in the phase change media by changing the electrical resistivity of a portion of the phase change media.
摘要翻译： 根据本发明的实施例的装置包括用于高密度数据存储读取，写入，擦除或重写的接触探针。 在一个实施例中，接触探针可以包括具有导电涂层的硅芯。 根据本发明的接触探针可以应用于相变介质，例如通过改变相变介质的一部分的电阻率在相变介质中形成标记。
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9.发明授权Methods for writing and reading highly resolved domains for high density data storage 失效用于高密度数据存储的高分辨率域的写入和读取方法公开(公告)号：US07379412B2
公开(公告)日：2008-05-27
申请号：US11004153
申请日：2004-12-03
IPC分类号： G11B9/00
CPC分类号： G11C13/0004 , G01Q80/00 , G11C29/006 , G11C2029/0403 , G11C2029/5002 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： Methods in accordance with the present invention can be applied, in an embodiment, to a media comprising a phase change material to alter a resolved portion of the phase change material to have a resistance different from a resistance of the bulk material. A tip having a substantially larger radius of curvature than the resolved portion can be employed by applying such methods. A substantially anisotropic columnar material can focus a current applied between the tip and the media so that the portion is narrower in width than the radius of curvature. Such highly resolved portions form bits in the media. Other objects, aspects and advantages of the invention can be obtained from reviewing the figures, specification and claims. This description is not intended to be a complete description of, or limit the scope of, the invention.
摘要翻译： 根据本发明的方法可以在一个实施方案中应用于包含相变材料的介质，以改变相变材料的分辨部分以具有与散装材料的电阻不同的电阻。 通过应用这种方法，可以采用具有比分辨部分大得多的曲率半径的尖端。 基本上各向异性的柱状材料可以聚焦施加在尖端和介质之间的电流，使得该部分的宽度比曲率半径窄。 这种高度分辨的部分在媒体中形成位。 本发明的其它目的，方面和优点可以通过阅读附图，说明书和权利要求来获得。 本说明书不是对本发明的完整描述或限制本发明的范围。
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公开(公告)号：US07336524B2
公开(公告)日：2008-02-26
申请号：US11321136
申请日：2005-12-29
申请人： Thomas F. Rust
发明人： Thomas F. Rust
IPC分类号： G11C11/00
CPC分类号： G11B9/1409 , B82Y10/00 , G11B5/00 , G11B5/127 , G11B9/14 , G11B9/1472 , G11B11/20 , G11B2005/0002 , G11B2005/0005
摘要： A device in accordance with embodiments of the present invention comprises a contact probe for high density data storage reading, writing, erasing, or rewriting. In one embodiment, the contact probe can include a silicon core having a conductive coating. Contact probes in accordance with the present invention can be applied to a phase change media, for example, to form an indicia in the phase change media by changing the electrical resistivity of a portion of the phase change media.
摘要翻译： 根据本发明的实施例的装置包括用于高密度数据存储读取，写入，擦除或重写的接触探针。 在一个实施例中，接触探针可以包括具有导电涂层的硅芯。 根据本发明的接触探针可以应用于相变介质，例如通过改变相变介质的一部分的电阻率在相变介质中形成标记。
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