发明授权
- 专利标题: Photoacid generating compounds, chemically amplified positive resist materials, and pattern forming method
- 专利标题(中): 光生酸化合物,化学放大阳性抗蚀剂材料和图案形成方法
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申请号: US10375773申请日: 2003-02-27
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公开(公告)号: US07303852B2公开(公告)日: 2007-12-04
- 发明人: Jun Hatakeyama , Tomohiro Kobayashi , Youichi Ohsawa
- 申请人: Jun Hatakeyama , Tomohiro Kobayashi , Youichi Ohsawa
- 申请人地址: JP Tokyo
- 专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Myers, Bigel, Sibley & Sajovec, P.A.
- 优先权: JP2001-397192 20011227
- 主分类号: G03F7/00
- IPC分类号: G03F7/00 ; G03F7/004
摘要:
The invention provides a high-resolution resist material comprising an acid generator that has high sensitivity and high resolution with respect to high-energy rays of 300 nm or less, has small line-edge roughness, and is superior in heat stability and in shelf stability, and provides a pattern forming method that uses this resist material. The invention further provides a chemically amplified positive resist material comprising a base resin, an acid generator and a solvent in which the acid generator generates an alkylimidic acid containing a fluorine group, and provides a pattern forming method comprising a step of applying the resist material to the substrate, a step of performing exposure to a high-energy ray of a wavelength of 300 nm or less through a photomask following heat treatment, and a step of performing development by a developing solution following heat treatment.