发明授权
US07303968B2 Semiconductor device and method having multiple subcollectors formed on a common wafer
有权
具有形成在公共晶片上的多个子集电极的半导体器件和方法
- 专利标题： Semiconductor device and method having multiple subcollectors formed on a common wafer
- 专利标题（中）： 具有形成在公共晶片上的多个子集电极的半导体器件和方法
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申请号： US11299682申请日： 2005-12-13
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公开(公告)号： US07303968B2公开(公告)日： 2007-12-04
- 发明人: James S. Dunn , Louis D. Lanzerotti , Steven H. Voldman
- 申请人： James S. Dunn , Louis D. Lanzerotti , Steven H. Voldman
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Connolly Bove Lodge & Hutz LLP
- 代理商 Anthony Canale
- 主分类号： H01L21/8222
- IPC分类号： H01L21/8222 ; H01L21/331 ; H01L21/8249
摘要：
A semiconductor device and a method of fabricating a semiconductor device having multiple subcollectors which are formed in a common wafer, in order to provide multiple structures having different characteristic and frequency response are provided. The subcollectors may be provided using different doses or different material implants resulting in devices having different optimum unity current gain cutoff frequency (fT) and breakdown voltage (BVCEO and BVCBO) on a common wafer.
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