Invention Grant
- Patent Title: High frequency power amplifier circuit and electronic component for high frequency power amplifier
- Patent Title (中): 高频功率放大器电路和电子元件用于高频功率放大器
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Application No.: US10960097Application Date: 2004-10-08
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Publication No.: US07304539B2Publication Date: 2007-12-04
- Inventor: Hirokazu Tsurumaki , Hiroyuki Nagai , Tomio Furuya , Makoto Ishikawa
- Applicant: Hirokazu Tsurumaki , Hiroyuki Nagai , Tomio Furuya , Makoto Ishikawa
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corporation
- Current Assignee: Renesas Technology Corporation
- Current Assignee Address: JP Tokyo
- Agency: Mattingly, Stanger, Malur & Brundidge, P.C.
- Priority: JP2003-356218 20031016; JP2003-356219 20031016
- Main IPC: H03G3/10
- IPC: H03G3/10
Abstract:
In a high frequency power amplifier circuit that supplies a bias to an amplifying FET by a current mirror method, scattering of a threshold voltage Vth due to the scattering of the channel impurity concentration of the FET, and a shift of a bias point caused by the scattering of the threshold voltage Vth and a channel length modulation coefficient λ due to a short channel effect are corrected automatically. The scattering of a high frequency power amplifying characteristic can be reduced as a result.
Public/Granted literature
- US20050083129A1 High frequency power amplifier circuit and electronic component for high frequency power amplifier Public/Granted day:2005-04-21
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