Invention Grant
US07304881B2 Ferroelectric memory with wide operating voltage and multi-bit storage per cell
有权
铁电存储器具有宽的工作电压和每个单元的多位存储
- Patent Title: Ferroelectric memory with wide operating voltage and multi-bit storage per cell
- Patent Title (中): 铁电存储器具有宽的工作电压和每个单元的多位存储
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Application No.: US10880406Application Date: 2004-06-28
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Publication No.: US07304881B2Publication Date: 2007-12-04
- Inventor: John Anthony Rodriguez , Kezhakkedath R. Udayakumar
- Applicant: John Anthony Rodriguez , Kezhakkedath R. Udayakumar
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; W. James Brady, III; Federick J. Telecky, Jr.
- Main IPC: G11C11/22
- IPC: G11C11/22
Abstract:
Apparatus and methods are described for a multi-level FeRAM memory device. Using write and read circuits associated with the memory device, multiple data states may be written to and read from the ferroelectric memory device which are associated with a single polarization direction, thereby allowing for a single cell to contain more than one bit of data.
Public/Granted literature
- US20040233744A1 Ferroelectric memory with wide operating voltage and multi-bit storage per cell Public/Granted day:2004-11-25
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