发明授权
US07306986B2 Method of making a semiconductor device, and semiconductor device made thereby
有权
制造半导体器件的方法和由此制成的半导体器件
- 专利标题： Method of making a semiconductor device, and semiconductor device made thereby
- 专利标题（中）： 制造半导体器件的方法和由此制成的半导体器件
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申请号： US11150499申请日： 2005-06-09
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公开(公告)号： US07306986B2公开(公告)日： 2007-12-11
- 发明人: Thomas P. Remmel , Sriram Kalpat , Melvy F. Miller , Peter Zurcher
- 申请人： Thomas P. Remmel , Sriram Kalpat , Melvy F. Miller , Peter Zurcher
- 申请人地址： US IL Schaumburg
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US IL Schaumburg
- 代理机构： Bryan Cave LLP
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242
摘要：
A method of making a semiconductor device includes the steps of: providing a semiconductor substrate (110, 510, 1010, 1610) having a patterned interconnect layer (120, 520, 1020, 1620) formed thereon; depositing a first dielectric material (130, 530, 1030, 1630) over the interconnect layer; depositing a first electrode material (140, 540, 1040, 1640) over the first dielectric material; depositing a second dielectric material (150, 550, 1050, 1650) over the first electrode material; depositing a second electrode material (160, 560, 1060, 1660) over the second dielectric material; patterning the second electrode material to form a top electrode (211, 611, 1111, 1611) of a first capacitor (210, 710, 1310, 1615); and patterning the first electrode material to form atop electrode (221, 721, 1221, 1621) of a second capacitor (220, 720, 1320, 1625), to form an electrode (212, 712, 1212, 1612) of the first capacitor, and to define a resistor (230, 730, 1330).
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