Invention Grant
- Patent Title: Reduced hydrogen sidewall spacer oxide
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Application No.: US10739973Application Date: 2003-12-17
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Publication No.: US07306995B2Publication Date: 2007-12-11
- Inventor: Haowen Bu , Clinton L. Montgomery , Amitabh Jain
- Applicant: Haowen Bu , Clinton L. Montgomery , Amitabh Jain
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Rose Alyssa Keagy; W. James Brady; Frederick J. Telecky, Jr.
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
An embodiment of the invention is a method of making a semiconductor structure 10 where the spacer oxide layer 90 is formed by a hydrogen free precursor CVD process. Another embodiment of the invention is a semiconductor structure 10 having a spacer oxide layer 90 with a hydrogen content of less than 1%.
Public/Granted literature
- US20050133876A1 Reduced hydrogen sidewall spacer oxide Public/Granted day:2005-06-23
Information query
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