发明授权
- 专利标题： Method for supercritical carbon dioxide processing of fluoro-carbon films
- 专利标题（中）： 氟碳膜超临界二氧化碳加工方法
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申请号： US10711649申请日： 2004-09-29
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公开(公告)号： US07307019B2公开(公告)日： 2007-12-11
- 发明人: Kohei Kawamura , Akira Asano , Koutarou Miyatani , Joseph T. Hillman , Bentley Palmer
- 申请人： Kohei Kawamura , Akira Asano , Koutarou Miyatani , Joseph T. Hillman , Bentley Palmer
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Wood, Herron & Evans, LLP
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A method for treating a fluoro-carbon dielectric film for integration of the dielectric film into a semiconductor device. The method includes providing a substrate having a fluoro-carbon film deposited thereon, the film having an exposed surface containing contaminants, and treating the exposed surface with a supercritical carbon dioxide fluid to clean the exposed surface of the contaminants and provide surface termination. The supercritical carbon dioxide treatment improves adhesion and electrical properties of film structures containing a metal-containing film formed on the surface of the fluoro-carbon dielectric film.
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