- 专利标题： Polishing method of Cu film and method for manufacturing semiconductor device
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申请号： US11540707申请日： 2006-10-02
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公开(公告)号： US07307023B2公开(公告)日： 2007-12-11
- 发明人: Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano , Susumu Yamamoto
- 申请人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano , Susumu Yamamoto
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2005-305577 20051020
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A method for polishing a Cu film comprises contacting a Cu film formed above a semiconductor substrate with a polishing pad attached to a turntable, and supplying a first chemical liquid which promotes the polishing of the Cu film and a second chemical liquid which contains a surfactant, to the polishing pad while the turntable being rotated, thereby polishing the Cu film, while monitoring at least one of a table current of the turntable and a surface temperature of the polishing pad to detect a change in at least one of the table current of the turntable and the surface temperature of the polishing pad. The supply of the second chemical liquid is controlled in conformity with the change.
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