公开(公告)号：US20110062374A1

公开(公告)日：2011-03-17

申请号：US12926358

申请日：2010-11-12

申请人： Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima ,  Susumu Yamamoto ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima ,  Susumu Yamamoto ,  Hiroyuki Yano

IPC分类号： C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212 ,  H01L22/26

摘要： A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.

摘要翻译： 提供了一种用于金属膜的CMP浆料，其包括基于浆料总量为0.01至0.3重量％的重均分子量不小于20,000的聚乙烯吡咯烷酮，氧化剂，保护膜 - 含有形成水不溶性络合物的第一络合剂和形成水溶性络合物的第二络合剂的成膜剂，以及一次粒径为5〜50nm的胶体二氧化硅。

公开(公告)号：US07307023B2

公开(公告)日：2007-12-11

申请号：US11540707

申请日：2006-10-02

申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Susumu Yamamoto

发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Susumu Yamamoto

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  B24B37/015 ,  B24B49/16 ,  B24B57/02 ,  C09G1/02

摘要： A method for polishing a Cu film comprises contacting a Cu film formed above a semiconductor substrate with a polishing pad attached to a turntable, and supplying a first chemical liquid which promotes the polishing of the Cu film and a second chemical liquid which contains a surfactant, to the polishing pad while the turntable being rotated, thereby polishing the Cu film, while monitoring at least one of a table current of the turntable and a surface temperature of the polishing pad to detect a change in at least one of the table current of the turntable and the surface temperature of the polishing pad. The supply of the second chemical liquid is controlled in conformity with the change.

公开(公告)号：US07833431B2

公开(公告)日：2010-11-16

申请号：US11561071

申请日：2006-11-17

申请人： Gaku Minamihaba ,  Nobuyuki Kurashima ,  Dai Fukushima ,  Yukiteru Matsui ,  Susumu Yamamoto ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Nobuyuki Kurashima ,  Dai Fukushima ,  Yukiteru Matsui ,  Susumu Yamamoto ,  Hiroyuki Yano

IPC分类号： B44C1/22 ,  H01L21/302 ,  C09K13/00 ,  C03C15/00

CPC分类号： H01L21/3212 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/7684

摘要： An aqueous dispersion for chemical mechanical polishing is provided, which includes water and a resin particle. The resin particles accompany with a projection having a curvature radius ranging from 10 nm to 1.65 μm on a surface. The maximum length of the resin particles is not more than 5 μm and is 2.5 to 25 times as large as the curvature radius.

摘要翻译： 提供了用于化学机械抛光的水分散体，其包括水和树脂颗粒。 树脂颗粒在表面附近具有范围为10nm至1.65μm的曲率半径的突起。 树脂粒子的最大长度为5μm以下，为曲率半径的2.5〜25倍。

公开(公告)号：US20070128873A1

公开(公告)日：2007-06-07

申请号：US11561071

申请日：2006-11-17

申请人： Gaku MINAMIHABA ,  Nobuyuki Kurashima ,  Dai Fukushima ,  Yukiteru Matsui ,  Susumu Yamamoto ,  Hiroyuki Yano

发明人： Gaku MINAMIHABA ,  Nobuyuki Kurashima ,  Dai Fukushima ,  Yukiteru Matsui ,  Susumu Yamamoto ,  Hiroyuki Yano

IPC分类号： C09K13/00 ,  H01L21/461 ,  C03C15/00 ,  H01L21/302 ,  B44C1/22

CPC分类号： H01L21/3212 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/7684

摘要： An aqueous dispersion for chemical mechanical polishing is provided, which includes water and a resin particle. The resin particles accompany with a projection having a curvature radius ranging from 10 nm to 1.65 μm on a surface. The maximum length of the resin particles is not more than 5 μm and is 2.5 to 25 times as large as the curvature radius.

摘要翻译： 提供了用于化学机械抛光的水分散体，其包括水和树脂颗粒。 树脂颗粒伴随着表面上具有10nm至1.65μm的曲率半径的突起。 树脂粒子的最大长度为5μm以下，为曲率半径的2.5〜25倍。

公开(公告)号：US08337715B2

公开(公告)日：2012-12-25

申请号：US12926358

申请日：2010-11-12

申请人： Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima ,  Susumu Yamamoto ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima ,  Susumu Yamamoto ,  Hiroyuki Yano

IPC分类号： C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212 ,  H01L22/26

摘要： A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.

摘要翻译： 提供了一种用于金属膜的CMP浆料，其包括基于浆料总量为0.01至0.3重量％的重均分子量不小于20,000的聚乙烯吡咯烷酮，氧化剂，保护膜 - 含有形成水不溶性络合物的第一络合剂和形成水溶性络合物的第二络合剂的成膜剂，以及一次粒径为5〜50nm的胶体二氧化硅。

公开(公告)号：US07419910B2

公开(公告)日：2008-09-02

申请号：US10932096

申请日：2004-09-02

申请人： Gaku Minamihaba ,  Dai Fukushima ,  Susumu Yamamoto ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Dai Fukushima ,  Susumu Yamamoto ,  Hiroyuki Yano

IPC分类号： H01L21/302

CPC分类号： C09K3/1463 ,  C09G1/02 ,  C23F3/06 ,  H01L21/3212 ,  H01L21/7684

摘要： Disclosed is a CMP slurry comprising a Cu oxidizing agent, a complexing agent for forming a Cu organic complex, a surfactant, an inorganic particle, and a resin particle containing polystyrene, having on the surface thereof a functional group of the same kind of polarity as that of the inorganic particle and having an average particle diameter of less than 100 nm, the resin particle being incorporated at a concentration of less than 1% by weight.

摘要翻译： 公开了一种CMP浆料，其包含Cu氧化剂，用于形成Cu有机络合物的络合剂，表面活性剂，无机颗粒和含有聚苯乙烯的树脂颗粒，其表面上具有相同极性的官能团 无机粒子的平均粒径小于100nm的树脂粒子的浓度小于1重量％。

公开(公告)号：US20070093064A1

公开(公告)日：2007-04-26

申请号：US11540707

申请日：2006-10-02

申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Susumu Yamamoto

发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Susumu Yamamoto

IPC分类号： C03C15/00 ,  H01L21/461 ,  H01L21/302 ,  B44C1/22

CPC分类号： H01L21/3212 ,  B24B37/015 ,  B24B49/16 ,  B24B57/02 ,  C09G1/02

摘要： A method for polishing a Cu film comprises contacting a Cu film formed above a semiconductor substrate with a polishing pad attached to a turntable, and supplying a first chemical liquid which promotes the polishing of the Cu film and a second chemical liquid which contains a surfactant, to the polishing pad while the turntable being rotated, thereby polishing the Cu film, while monitoring at least one of a table current of the turntable and a surface temperature of the polishing pad to detect a change in at least one of the table current of the turntable and the surface temperature of the polishing pad. The supply of the second chemical liquid is controlled in conformity with the change.

摘要翻译： 一种用于抛光Cu膜的方法包括使形成在半导体衬底上的Cu膜与附着在转盘上的抛光垫接触，并提供促进Cu膜抛光的第一种化学液体和含有表面活性剂的第二种化学液体， 在转盘旋转的同时向抛光垫移动，由此抛光Cu膜，同时监测转台的工作台电流和抛光垫的表面温度中的至少一个，以检测抛光垫的表电流中的至少一个的变化 转盘和抛光垫的表面温度。 根据变化来控制第二化学液体的供给。

公开(公告)号：US20070232068A1

公开(公告)日：2007-10-04

申请号：US11717045

申请日：2007-03-13

申请人： Gaku Minamihaba ,  Nobuyuki Kurashima ,  Dai Fukushima ,  Takatoshi Ono ,  Susumu Yamamoto ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Nobuyuki Kurashima ,  Dai Fukushima ,  Takatoshi Ono ,  Susumu Yamamoto ,  Hiroyuki Yano

IPC分类号： B24D3/02 ,  H01L21/461 ,  H01L21/302

CPC分类号： H01L21/7684 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/3212

摘要： A slurry for touch-up CMP is provided, which includes water, colloidal silica having an average primary particle diameter of 5 to 60 nm, unsintered cerium oxide having an average primary particle diameter of 5 to 60 nm, a multivalent organic acid containing no nitrogen atoms, and a nitrogen-containing heterocyclic compound. The slurry has a pH of 8 to 12.

摘要翻译： 提供了一种用于接触CMP的浆料，其包括平均一次粒径为5至60nm的水，平均一次粒径为5至60nm的未烧结的氧化铈，不含氮的多价有机酸 原子和含氮杂环化合物。 浆料的pH值为8〜12。

公开(公告)号：US20060243702A1

公开(公告)日：2006-11-02

申请号：US11340494

申请日：2006-01-27

申请人： Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima ,  Susumu Yamamoto ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima ,  Susumu Yamamoto ,  Hiroyuki Yano

IPC分类号： C09K13/00 ,  H01L21/461 ,  B44C1/22 ,  H01L21/302

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212 ,  H01L22/26

摘要： A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.

摘要翻译： 提供了一种用于金属膜的CMP浆料，其包括基于浆料总量为0.01至0.3重量％的重均分子量不小于20,000的聚乙烯吡咯烷酮，氧化剂，保护膜 - 含有形成水不溶性络合物的第一络合剂和形成水溶性络合物的第二络合剂的成膜剂，以及一次粒径为5〜50nm的胶体二氧化硅。

公开(公告)号：US20050118821A1

公开(公告)日：2005-06-02

申请号：US10932096

申请日：2004-09-02

申请人： Gaku Minamihaba ,  Dai Fukushima ,  Susumu Yamamoto ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Dai Fukushima ,  Susumu Yamamoto ,  Hiroyuki Yano

IPC分类号： B24B37/00 ,  B82Y10/00 ,  B82Y99/00 ,  C09G1/02 ,  C09G1/16 ,  C09K3/14 ,  C23F3/06 ,  H01L21/302 ,  H01L21/304 ,  H01L21/321 ,  H01L21/461 ,  H01L21/768

CPC分类号： C09K3/1463 ,  C09G1/02 ,  C23F3/06 ,  H01L21/3212 ,  H01L21/7684

摘要： Disclosed is a CMP slurry comprising a Cu oxidizing agent, a complexing agent for forming a Cu organic complex, a surfactant, an inorganic particle, and a resin particle containing polystyrene, having on the surface thereof a functional group of the same kind of polarity as that of the inorganic particle and having an average particle diameter of less than 100 nm, the resin particle being incorporated at a concentration of less than 1% by weight.

摘要翻译： 公开了一种CMP浆料，其包含Cu氧化剂，用于形成Cu有机络合物的络合剂，表面活性剂，无机颗粒和含有聚苯乙烯的树脂颗粒，其表面上具有相同极性的官能团 无机粒子的平均粒径小于100nm的树脂粒子的浓度小于1重量％。