Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US10456901Application Date: 2003-06-09
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Publication No.: US07307292B2Publication Date: 2007-12-11
- Inventor: Katsunori Nishii , Kaoru Inoue , Toshinobu Matsuno , Yoshito Ikeda , Hiroyuki Masato
- Applicant: Katsunori Nishii , Kaoru Inoue , Toshinobu Matsuno , Yoshito Ikeda , Hiroyuki Masato
- Applicant Address: JP Osaka
- Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Nixon Peabody LLP
- Agent Donald R. Studebaker
- Priority: JP2001-051576 20010227
- Main IPC: H01L31/0336
- IPC: H01L31/0336
Abstract:
An insulating-gate semiconductor device has a first nitride semiconductor layer formed over a substrate and an insulating oxidation layer obtained by oxidizing a second nitride semiconductor layer formed on the first nitride semiconductor layer. A gate electrode is formed on the insulating oxidation layer.
Public/Granted literature
- US20030209762A1 Semiconductor device and method for fabricating the same Public/Granted day:2003-11-13
Information query
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