发明授权
- 专利标题： Semiconductor device including a discontinuous film and method for manufacturing the same
- 专利标题（中）： 包括不连续膜的半导体器件及其制造方法
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申请号： US11239077申请日： 2005-09-30
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公开(公告)号： US07307344B2公开(公告)日： 2007-12-11
- 发明人: Gaku Minamihaba , Hiroyuki Yano , Nobuyuki Kurashima , Susumu Yamamoto
- 申请人： Gaku Minamihaba , Hiroyuki Yano , Nobuyuki Kurashima , Susumu Yamamoto
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2004-369726 20041221
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
Disclosed is a semiconductor device comprising a semiconductor substrate, a first insulating film formed above the semiconductor substrate, Cu wiring buried in the first insulating film, a second insulating film formed above the Cu wiring, and a discontinuous film made of at least one metal selected from the group consisting of Ti, Al, W, Pd, Sn, Ni, Mg and Zn, or a metal oxide thereof and interposed at an interface between the Cu wiring and the second insulating film.