发明授权
US07307369B2 Surface acoustic wave device, surface acoustic wave apparatus, and communications equipment 失效
表面声波装置,表面声波装置和通信设备

Surface acoustic wave device, surface acoustic wave apparatus, and communications equipment
摘要:
An IDT electrode 3, and an input electrode section 5 and an output electrode section 6 each connecting with the IDT electrode 3 are formed in a filter region on one main surface of a piezoelectric substrate 2, and a semiconductor layer 22 is formed on the other main surface opposite to the one main surface of the piezoelectric substrate 2. The semiconductor layer 22 makes it possible to prevent pyroelectric destruction in the device manufacturing process as well as to prevent out-of-band attenuation characteristics from being degraded.
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