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    Surface acoustic wave element and surface acoustic wave device
    1.
    发明授权
    Surface acoustic wave element and surface acoustic wave device 有权
    表面声波元件和声表面波器件

    公开(公告)号：US07893597B2

    公开(公告)日：2011-02-22

    申请号：US11577867

    申请日：2006-09-20

    申请人： Yuriko Nishimura ,  Shigehiko Nagamine ,  Kiyohiro Iioka

    发明人： Yuriko Nishimura ,  Shigehiko Nagamine ,  Kiyohiro Iioka

    IPC分类号： H03H9/25 ,  H01L41/047

    CPC分类号： H03H9/02834 ,  H03H9/14541

    摘要： A surface acoustic wave element 1 includes an IDT electrode 11 having an electrode finger 11a on a piezoelectric substrate 10. The electrode finger 11a is formed by laminating an intermediate layer 12 and an electrode layer 13 having a higher coefficient of thermal expansion than that of the intermediate layer 12. The electrode finger 11a has a cross section of a trapezoidal shape that widens nearer to the piezoelectric substrate 10. An angle α1 formed with a side surface of the intermediate layer 12 is formed larger than an angle β1 formed with a side surface of the electrode layer 13.

    摘要翻译： 表面声波元件1包括在压电基板10上具有电极指11a的IDT电极11.电极指11a通过层叠中间层12和具有比热膨胀系数高的热膨胀系数的电极层13而形成 电极指11a具有越来越接近压电基板10的梯形截面。形成有中间层12的侧面的角度α1形成为大于形成有角度＆ 电极层13的侧面。

    Surface Acoustic Wave Element and Communication Device
    2.
    发明申请
    Surface Acoustic Wave Element and Communication Device 有权
    表面声波元件和通信设备

    公开(公告)号：US20090243430A1

    公开(公告)日：2009-10-01

    申请号：US11577982

    申请日：2005-10-25

    申请人： Yuuko Yokota ,  Shigehiko Nagamine ,  Kiyo Yamahara

    发明人： Yuuko Yokota ,  Shigehiko Nagamine ,  Kiyo Yamahara

    IPC分类号： H01L41/047

    CPC分类号： H03H9/14541

    摘要： An IDT electrode (3) on a piezoelectric substrate (2) has an electrode including first metal layers (31a, 31b) formed of titanium or a titanium alloy, or chromium or a chromium alloy and second metal layers (32a, 32b) formed of aluminum or an aluminum alloy, copper or a copper alloy, or gold or a gold alloy, which are laminated alternately. The orientation degrees in the first metal layer (31a) that is closest to the surface of the piezoelectric substrate (2) in the first metal layers (31a, 31b) and the second metal layer (32a) that is closest to the surface of the piezoelectric substrate (2) in the second metal layers (32a, 32b) are higher than the orientation degrees in the upper metal layers. As compared with the prior art where the orientation degrees in the first metal layers (31a, 31b) and the second metal layers (32a, 32b) are not considered, the power handling capability of the IDT electrode (3) can be significantly improved.

    摘要翻译： 压电基板（2）上的IDT电极（3）具有包括由钛或钛合金形成的第一金属层（31a，31b）或铬或铬合金的第一金属层（31a，31b）和由 铝或铝合金，铜或铜合金，或金或金合金，其交替层压。 最接近第一金属层（31a，31b）中的压电基板（2）的表面的第一金属层（31a）和最靠近表面的第二金属层（32a）的取向度 第二金属层（32a，32b）中的压电基片（2）比上金属层中的取向度高。 与不考虑第一金属层（31a，31b）和第二金属层（32a，32b）中的取向度的现有技术相比，可以显着提高IDT电极（3）的功率处理能力。

    Surface acoustic wave element and communication device
    4.
    发明授权
    Surface acoustic wave element and communication device 有权
    表面声波元件和通讯装置

    公开(公告)号：US07795788B2

    公开(公告)日：2010-09-14

    申请号：US11577982

    申请日：2005-10-25

    申请人： Yuuko Yokota ,  Shigehiko Nagamine ,  Kiyo Yamahara

    发明人： Yuuko Yokota ,  Shigehiko Nagamine ,  Kiyo Yamahara

    IPC分类号： H01L41/047 ,  H03H9/25

    CPC分类号： H03H9/14541

    摘要： An IDT electrode (3) on a piezoelectric substrate (2) has an electrode including first metal layers (31a, 31b) formed of titanium or a titanium alloy, or chromium or a chromium alloy and second metal layers (32a, 32b) formed of aluminum or an aluminum alloy, copper or a copper alloy, or gold or a gold alloy, which are laminated alternately. The orientation degrees in the first metal layer (31a) that is closest to the surface of the piezoelectric substrate (2) in the first metal layers (31a, 31b) and the second metal layer (32a) that is closest to the surface of the piezoelectric substrate (2) in the second metal layers (32a, 32b) are higher than the orientation degrees in the upper metal layers. As compared with the prior art where the orientation degrees in the first metal layers (31a, 31b) and the second metal layers (32a, 32b) are not considered, the power handling capability of the IDT electrode (3) can be significantly improved.

    摘要翻译： 压电基板（2）上的IDT电极（3）具有包括由钛或钛合金形成的第一金属层（31a，31b）或铬或铬合金的第一金属层（31a，31b）和由 铝或铝合金，铜或铜合金，或金或金合金，其交替层压。 最接近第一金属层（31a，31b）中的压电基板（2）的表面的第一金属层（31a）和最靠近表面的第二金属层（32a）的取向度 第二金属层（32a，32b）中的压电基片（2）比上金属层中的取向度高。 与不考虑第一金属层（31a，31b）和第二金属层（32a，32b）中的取向度的现有技术相比，可以显着提高IDT电极（3）的功率处理能力。

    Surface acoustic wave device and electronic circuit device
    5.
    发明授权
    Surface acoustic wave device and electronic circuit device 有权
    表面声波装置和电子电路装置

    公开(公告)号：US07385463B2

    公开(公告)日：2008-06-10

    申请号：US11021087

    申请日：2004-12-21

    申请人： Wataru Koga ,  Yoshifumi Yamagata ,  Shigehiko Nagamine

    发明人： Wataru Koga ,  Yoshifumi Yamagata ,  Shigehiko Nagamine

    IPC分类号： H03H9/10 ,  H03H9/25

    CPC分类号： H03H9/725 ,  H01L2224/16225 ,  H01L2924/181 ,  H03H9/02897 ,  H03H9/0576 ,  H03H9/059 ,  H03H9/1085 ,  H03H2250/00 ,  H01L2924/00012

    摘要： In a surface acoustic wave device, an excitation electrode 5 in a surface acoustic wave element is provided on a lower surface of a piezoelectric substrate 3, and the lower surface of the piezoelectric substrate 3 is disposed in a state where it is opposed to an upper surface of a mounting base member 2. The surface acoustic wave device comprises a through hole 9 penetrating between the upper surface and a lower surface of the mounting base member 2, a lead electrode 10 closing the through hole 9 and formed so as to extend to the lower surface of the mounting base member 2, and an insulator 11 covering the lead electrode 10 so as to expose its partial area 16. When the surface acoustic wave device is mounted on a circuit board or the like, therefore, the through hole 9 is closed by the insulator 11, so that no bubbles are produced in the through hole 9, and cracks can be prevented from appearing, thereby making it possible to provide a highly reliable surface acoustic wave device having no inferior connection or the like.

    摘要翻译： 在声表面波装置中，在压电基板3的下表面上设置表面声波元件的激励电极5，压电基板3的下表面配置在与上部 安装基座构件2的表面。 表面声波装置包括穿透安装基座部件2的上表面和下表面之间的通孔9，封闭通孔9并形成为延伸到安装基座部件的下表面的引线电极10 以及覆盖引线电极10以暴露其部分区域16的绝缘体11。 因此，当声表面波装置安装在电路板等上时，通孔9被绝缘体11封闭，从而在通孔9中不会产生气泡，从而可以防止出现裂缝 使得可以提供没有差的连接等的高度可靠的表面声波装置。

    Surface acoustic wave device and electronic circuit device
    7.
    发明申请
    Surface acoustic wave device and electronic circuit device 有权
    表面声波装置和电子电路装置

    公开(公告)号：US20050146397A1

    公开(公告)日：2005-07-07

    申请号：US11021087

    申请日：2004-12-21

    申请人： Wataru Koga ,  Yoshifumi Yamagata ,  Shigehiko Nagamine

    发明人： Wataru Koga ,  Yoshifumi Yamagata ,  Shigehiko Nagamine

    IPC分类号： H03H3/08 ,  H03H9/00 ,  H03H9/02 ,  H03H9/10 ,  H03H9/25 ,  H03H9/64 ,  H03H9/72

    CPC分类号： H03H9/725 ,  H01L2224/16225 ,  H01L2924/181 ,  H03H9/02897 ,  H03H9/0576 ,  H03H9/059 ,  H03H9/1085 ,  H03H2250/00 ,  H01L2924/00012

    摘要： In a surface acoustic wave device, an excitation electrode 5 in a surface acoustic wave element is provided on a lower surface of a piezoelectric substrate 3, and the lower surface of the piezoelectric substrate 3 is disposed in a state where it is opposed to an upper surface of a mounting base member 2. The surface acoustic wave device comprises a through hole 9 penetrating between the upper surface and a lower surface of the mounting base member 2, a lead electrode 10 closing the through hole 9 and formed so as to extend to the lower surface of the mounting base member 2, and an insulator 11 covering the lead electrode 10 so as to expose its partial area 16. When the surface acoustic wave device is mounted on a circuit board or the like, therefore, the through hole 9 is closed by the insulator 11, so that no bubbles are produced in the through hole 9, and cracks can be prevented from appearing, thereby making it possible to provide a highly reliable surface acoustic wave device having no inferior connection or the like.

    摘要翻译： 在声表面波装置中，在压电基板3的下表面上设置表面声波元件的激励电极5，压电基板3的下表面配置在与上部 安装基座构件2的表面。 表面声波装置包括穿透安装基座部件2的上表面和下表面之间的通孔9，封闭通孔9并形成为延伸到安装基座部件的下表面的引线电极10 以及覆盖引线电极10以暴露其部分区域16的绝缘体11。 因此，当声表面波装置安装在电路板等上时，通孔9被绝缘体11封闭，从而在通孔9中不产生气泡，从而可以防止出现裂缝 使得可以提供没有差的连接等的高度可靠的表面声波装置。

    Surface acoustic wave device and manufacturing method thereof
    9.
    发明申请
    Surface acoustic wave device and manufacturing method thereof 审中-公开
    声表面波装置及其制造方法

    公开(公告)号：US20070046142A1

    公开(公告)日：2007-03-01

    申请号：US11508326

    申请日：2006-08-23

    申请人： Ikuo Obara ,  Shigehiko Nagamine ,  Kiyohiro Iioka

    发明人： Ikuo Obara ,  Shigehiko Nagamine ,  Kiyohiro Iioka

    IPC分类号： H03H9/25

    CPC分类号： H03H3/08 ,  H01L2224/05001 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05644 ,  H01L2224/16225 ,  H01L2924/181 ,  H03H9/02559 ,  H03H9/059 ,  H03H9/1092 ,  H03H9/14541 ,  H01L2924/00012 ,  H01L2924/00014

    摘要： A surface acoustic wave device includes an excitation electrode formed on a piezoelectric substrate and a binding electrode to be connected with a mounting substrate. The binding electrode is provided with a lower electrode formed on the piezoelectric substrate and an intermediate layer that is made of an adhesion electrode layer and a barrier metal electrode layer. The barrier metal electrode layer includes at least one impurity-containing layer. The binding electrode represents an annular electrode formed to surround the excitation electrode and a wiring electrode connected to the excitation electrode. A surface of at least one of the piezoelectric substrate, the lower electrode and the barrier metal electrode layer is bombarded to make it a rough surface. As a result, a warp due to a film stress caused in each of the layers can be suppressed.

    摘要翻译： 表面声波装置包括形成在压电基板上的激励电极和与安装基板连接的装订电极。 接合电极设置有形成在压电基板上的下电极和由粘附电极层和阻挡金属电极层制成的中间层。 阻挡金属电极层包括至少一个含杂质层。 装订电极表示形成为围绕激励电极的环形电极和连接到激励电极的布线电极。 压电基板，下电极和阻挡金属电极层中的至少一个的表面被轰击以使其成为粗糙表面。 结果，可以抑制由于在每个层中引起的膜应力引起的翘曲。