发明授权
- 专利标题: Mounting structure of high-frequency semiconductor apparatus and its production method
- 专利标题(中): 高频半导体装置的安装结构及其制作方法
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申请号: US10871054申请日: 2004-06-21
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公开(公告)号: US07307581B2公开(公告)日: 2007-12-11
- 发明人: Yoshiyuki Sasada
- 申请人: Yoshiyuki Sasada
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Crowell & Moring LLP
- 优先权: JP2002-001296 20020108
- 主分类号: G01S13/491
- IPC分类号: G01S13/491 ; H03B1/00 ; G01S13/93 ; G01S13/00
摘要:
In a high-frequency circuit having a substrate having a high-frequency transmission line and an dielectric resonator formed on said substrate so that said dielectric resonator and said high-frequency transmission line may be coupled electro-magnetically to each other, a hole part or a cavity part is formed at a part of said substrate and a dielectric resonator is embedded in said hole part or said cavity part. In the same object, a high-frequency circuit having a dielectric resonator is produced by the step for forming a high-frequency transmission line on a substrate, the step for forming a hole part or a cavity part on a part of the substrate, and the step for mounting a dielectric resonator in the hole par formed on the surface of the substrate.
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