发明授权
US07312114B2 Manufacturing method for a trench capacitor having an isolation collar electrically connected with a substrate on a single side via a buried contact for use in a semiconductor memory cell
有权
具有隔离环的沟槽电容器的制造方法,所述隔离环经由用于半导体存储单元的埋入触点在单侧上与衬底电连接
- 专利标题: Manufacturing method for a trench capacitor having an isolation collar electrically connected with a substrate on a single side via a buried contact for use in a semiconductor memory cell
- 专利标题(中): 具有隔离环的沟槽电容器的制造方法,所述隔离环经由用于半导体存储单元的埋入触点在单侧上与衬底电连接
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申请号: US11115391申请日: 2005-04-27
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公开(公告)号: US07312114B2公开(公告)日: 2007-12-25
- 发明人: Stephan Kudelka , Guenther Aichmayr
- 申请人: Stephan Kudelka , Guenther Aichmayr
- 申请人地址: DE Munich
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Munich
- 代理机构: Eschweiler & Associates, LLC
- 主分类号: H01L21/8242
- IPC分类号: H01L21/8242
摘要:
The present invention relates to a manufacturing method for a trench capacitor having an isolation collar which is electrically connected with a substrate on a single side via a buried contact. More specifically, the present invention relates to manufacturing method for a trench capacitor having an isolation collar with a metal conductive fill in the collar region connected to a metal fill in the capacitor region.