发明授权
- 专利标题： Semiconductor device having antenna connection electrodes
- 专利标题（中）： 具有天线连接电极的半导体装置
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申请号： US10778234申请日： 2004-02-17
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公开(公告)号： US07312528B2公开(公告)日： 2007-12-25
- 发明人: Hiroto Watanabe , Osamu Nakayama , Osamu Shiratsuchi , Kazuhiko Daido
- 申请人： Hiroto Watanabe , Osamu Nakayama , Osamu Shiratsuchi , Kazuhiko Daido
- 申请人地址： JP Ibaraki-Shi
- 专利权人： Hitachi Maxell, Ltd.
- 当前专利权人： Hitachi Maxell, Ltd.
- 当前专利权人地址： JP Ibaraki-Shi
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 优先权： JP2003-039647 20030218
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L23/522
摘要：
A semiconductor device includes first and second antenna connection electrodes placed on the periphery of a semiconductor chip, an on-chip antenna connection electrode placed in the inner area of the semiconductor chip compared to the first and second antenna connection electrodes, and an internal circuit formed in the semiconductor chip. The first and second antenna connection electrodes are connected to the internal circuit by internal lines. The on-chip antenna connection electrode is connected to the internal circuit and the second antenna connection electrode by internal lines. An on-chip antenna is connected to the second antenna connection electrode and the on-chip antenna connection electrode. An external antenna is connected to the first and second antenna connection electrodes.
公开/授权文献
- US20040159932A1 Semiconductor device 公开/授权日：2004-08-19
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