发明授权
- 专利标题: NMOS reverse battery protection
- 专利标题(中): NMOS反向电池保护
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申请号: US11077475申请日: 2005-03-10
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公开(公告)号: US07312653B2公开(公告)日: 2007-12-25
- 发明人: Keming Chen , David Tang
- 申请人: Keming Chen , David Tang
- 申请人地址: US MI Detroit
- 专利权人: GM Global Technology Operations, Inc.
- 当前专利权人: GM Global Technology Operations, Inc.
- 当前专利权人地址: US MI Detroit
- 主分类号: G01F1/10
- IPC分类号: G01F1/10
摘要:
A reverse polarity protected system comprises a voltage source that includes positive and negative terminals. A polarity-sensitive device has a first terminal that communicates with the positive terminal of the voltage source, and that includes a second terminal. A low-resistance switch communicates with the first and second terminals of the voltage source, and communicates with the second terminal of the polarity-sensitive device. The low-resistance switch assumes a conducting state between the second terminal of the polarity-sensitive device and the negative terminal of the voltage source when a first voltage at the positive terminal of the voltage source minus a second voltage at the negative terminal of the voltage source is greater than a threshold voltage. Otherwise, the low-resistance switch assumes a non-conducting state.
公开/授权文献
- US20060202746A1 NMOS reverse battery protection 公开/授权日:2006-09-14
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