发明授权
- 专利标题： Semiconductor wafer treatment method, semiconductor wafer inspection method, semiconductor device development method and semiconductor wafer treatment apparatus
- 专利标题（中）： 半导体晶片处理方法，半导体晶片检查方法，半导体器件显影方法和半导体晶片处理装置
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申请号： US10706090申请日： 2003-11-13
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公开(公告)号： US07314766B2公开(公告)日： 2008-01-01
- 发明人: Junji Sugamoto , Norihiko Tsuchiya , Yukihiro Ushiku , Katsujiro Tanzawa
- 申请人： Junji Sugamoto , Norihiko Tsuchiya , Yukihiro Ushiku , Katsujiro Tanzawa
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2002-330683 20021114; JP2003-372019 20031031
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A treatment method of a semiconductor wafer includes treating the semiconductor wafer in a first solution having at least one kind of an oxidative acid and an oxidizing agent and treating the semiconductor wafer in a second solution having at least one of HF and NH4F.