Invention Grant
US07315045B2 Sapphire/gallium nitride laminate having reduced bending deformation
有权
蓝宝石/氮化镓层压板具有减小的弯曲变形
- Patent Title: Sapphire/gallium nitride laminate having reduced bending deformation
- Patent Title (中): 蓝宝石/氮化镓层压板具有减小的弯曲变形
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Application No.: US11045688Application Date: 2005-01-28
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Publication No.: US07315045B2Publication Date: 2008-01-01
- Inventor: Chang Ho Lee , Hae Yong Lee , Choon Kon Kim
- Applicant: Chang Ho Lee , Hae Yong Lee , Choon Kon Kim
- Applicant Address: KR
- Assignee: Samsung Corning Co., Ltd.
- Current Assignee: Samsung Corning Co., Ltd.
- Current Assignee Address: KR
- Agency: Anderson Kill & Olick, PC
- Priority: KR10-2004-0005585 20040129
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L31/12 ; H01L33/00
Abstract:
The present invention relates to a sapphire/gallium nitride laminate, wherein a curvature radius thereof is positioned on the right side of a first curve plotted from the following functional formula (I): Y=Y0+A·e−(x−1)/T (I) wherein Y is the curvature radius (m) of a sapphire/gallium nitride laminate, X is the thickness (μm) of a gallium nitride film, Y0 is 5.47±0.34, A is 24.13±0.50, and T is 0.56±0.04. The inventive laminate can be advantageously used in the manufacture of a high quality electronic device.
Public/Granted literature
- US20050167683A1 Sapphire/gallium nitride laminate having reduced bending deformation Public/Granted day:2005-08-04
Information query
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