Sapphire/gallium nitride laminate having reduced bending deformation
    1.
    发明授权
    Sapphire/gallium nitride laminate having reduced bending deformation 有权
    蓝宝石/氮化镓层压板具有减小的弯曲变形

    公开(公告)号:US07315045B2

    公开(公告)日:2008-01-01

    申请号:US11045688

    申请日:2005-01-28

    Abstract: The present invention relates to a sapphire/gallium nitride laminate, wherein a curvature radius thereof is positioned on the right side of a first curve plotted from the following functional formula (I): Y=Y0+A·e−(x−1)/T  (I) wherein Y is the curvature radius (m) of a sapphire/gallium nitride laminate, X is the thickness (μm) of a gallium nitride film, Y0 is 5.47±0.34, A is 24.13±0.50, and T is 0.56±0.04. The inventive laminate can be advantageously used in the manufacture of a high quality electronic device.

    Abstract translation: 蓝宝石/氮化镓层压板本发明涉及蓝宝石/氮化镓层压板,其曲率半径位于从以下功能式(I)绘制的第一曲线的右侧:<?in-line-formula description =“In-line 公式“end =”lead“?> Y = Y <0> Ae - (x-1)/ T(I)<?in-line-formula description =” 其中Y是蓝宝石/氮化镓层叠体的曲率半径(μm),X是氮化镓膜的厚度(mum),Y <0 为5.47±0.34,A为24.13±0.50,T为0.56±0.04。 本发明的层压板可以有利地用于制造高质量的电子设备。

    GALLIUM NITRIDE/SAPPHIRE THIN FILM HAVING REDUCED BENDING DEFORMATION
    3.
    发明申请
    GALLIUM NITRIDE/SAPPHIRE THIN FILM HAVING REDUCED BENDING DEFORMATION 有权
    具有减少弯曲变形的氮化钠/ SAPPHIRE薄膜

    公开(公告)号:US20080248259A1

    公开(公告)日:2008-10-09

    申请号:US11869080

    申请日:2007-10-09

    Abstract: The present invention relates to a gallium nitride/sapphire thin film, wherein a curvature radius thereof is positioned on the right side of a curve plotted from the following functional formula (I): Y=Y0+A·e−(x1−1)/T1+B·(1−e−x2/T2)   (I) wherein Y is the curvature radius (m) of a gallium nitride/sapphire thin film, x1 is the thickness (μm) of a gallium nitride layer, x2 is the thickness (mm) of a sapphire substrate, Y0 is −107±2.5, A is 24.13±0.50, B is 141±4.5, T1 is 0.56±0.04, and T2 is 0.265±0.5.

    Abstract translation: 本发明涉及一种氮化镓/蓝宝石薄膜,其曲率半径位于从以下函数式(I)绘制的曲线的右侧:<?in-line-formula description =“In-line 公式“end =”lead“?> Y = Y <0> - (x -1)/ T 1 + B。(1-e / T 2 )(I)<?in-line-formula description =“In-line Formulas”end = “尾”→其中Y是氮化镓/蓝宝石薄膜的曲率半径(m),x 1是氮化镓层的厚度(mum),x 2 < / SUB>是蓝宝石衬底的厚度(mm),Y 0 <0>为-107±2.5,A为24.13±0.50,B为141±4.5,T 1 < 为0.56±0.04,T <2>为0.265±0.5。

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