公开(公告)号：US07315045B2

公开(公告)日：2008-01-01

申请号：US11045688

申请日：2005-01-28

Applicant: Chang Ho Lee ,  Hae Yong Lee ,  Choon Kon Kim

Inventor： Chang Ho Lee ,  Hae Yong Lee ,  Choon Kon Kim

IPC: H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC classification number: C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01S5/0213 ,  H01S2304/12 ,  Y10T428/24628

Abstract: The present invention relates to a sapphire/gallium nitride laminate, wherein a curvature radius thereof is positioned on the right side of a first curve plotted from the following functional formula (I): Y=Y0+A·e−(x−1)/T  (I) wherein Y is the curvature radius (m) of a sapphire/gallium nitride laminate, X is the thickness (μm) of a gallium nitride film, Y0 is 5.47±0.34, A is 24.13±0.50, and T is 0.56±0.04. The inventive laminate can be advantageously used in the manufacture of a high quality electronic device.

Abstract translation: 蓝宝石/氮化镓层压板本发明涉及蓝宝石/氮化镓层压板，其曲率半径位于从以下功能式（I）绘制的第一曲线的右侧：<？in-line-formula description =“In-line 公式“end =”lead“？> Y = Y <0> Ae - （x-1）/ T（I）<？in-line-formula description =” 其中Y是蓝宝石/氮化镓层叠体的曲率半径（μm），X是氮化镓膜的厚度（mum），Y <0 为5.47±0.34，A为24.13±0.50，T为0.56±0.04。 本发明的层压板可以有利地用于制造高质量的电子设备。

公开(公告)号：US07518151B2

公开(公告)日：2009-04-14

申请号：US11869080

申请日：2007-10-09

Applicant: Chang Ho Lee ,  Hae Yong Lee ,  Choon Kon Kim ,  Kisoo Lee

Inventor： Chang Ho Lee ,  Hae Yong Lee ,  Choon Kon Kim ,  Kisoo Lee

IPC: H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC classification number: C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01S5/0213 ,  H01S2304/12 ,  Y10T428/24628

Abstract: The present invention relates to a gallium nitride/sapphire thin film, wherein a curvature radius thereof is positioned on the right side of a curve plotted from the following functional formula (I): Y=Y0+A·e−(x1−1)/T1+B·(1−e−x2/T2)  (I) wherein Y is the curvature radius (m) of a gallium nitride/sapphire thin film, x1 is the thickness (μm) of a gallium nitride layer, x2 is the thickness (mm) of a sapphire substrate, Y0 is −107±2.5, A is 24.13±0.50, B is 141±4.5, T1 is 0.56±0.04, and T2 is 0.265±0.5.

Abstract translation: 本发明涉及一种氮化镓/蓝宝石薄膜，其曲率半径位于从以下函数式（I）绘制的曲线的右侧：<？in-line-formula description =“In-line 公式“end =”lead“？> Y = Y0 + Ae-（x 1）/ T + B。（1-ex / sub2> / T 2 ）（I）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中Y是a的曲率半径 氮化镓/蓝宝石薄膜，x1是氮化镓层的厚度（mum），x2是蓝宝石衬底的厚度（mm），Y0为-107±2.5，A为24.13±0.50，B为141±4.5 ，T1为0.56±0.04，T2为0.265±0.5。

公开(公告)号：US20080248259A1

公开(公告)日：2008-10-09

申请号：US11869080

申请日：2007-10-09

Applicant: Chang Ho Lee ,  Hae Yong Lee ,  Choon Kon Kim ,  Kisoo Lee

Inventor： Chang Ho Lee ,  Hae Yong Lee ,  Choon Kon Kim ,  Kisoo Lee

IPC: B32B1/00

CPC classification number: C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01S5/0213 ,  H01S2304/12 ,  Y10T428/24628

Abstract: The present invention relates to a gallium nitride/sapphire thin film, wherein a curvature radius thereof is positioned on the right side of a curve plotted from the following functional formula (I): Y=Y0+A·e−(x1−1)/T1+B·(1−e−x2/T2)   (I) wherein Y is the curvature radius (m) of a gallium nitride/sapphire thin film, x1 is the thickness (μm) of a gallium nitride layer, x2 is the thickness (mm) of a sapphire substrate, Y0 is −107±2.5, A is 24.13±0.50, B is 141±4.5, T1 is 0.56±0.04, and T2 is 0.265±0.5.

Abstract translation: 本发明涉及一种氮化镓/蓝宝石薄膜，其曲率半径位于从以下函数式（I）绘制的曲线的右侧：<？in-line-formula description =“In-line 公式“end =”lead“？> Y = Y <0> - （x -1）/ T _{1 + B。（1-e ^{/ T 2 ）（I）<？in-line-formula description =“In-line Formulas”end = “尾”→其中Y是氮化镓/蓝宝石薄膜的曲率半径（m），x 1是氮化镓层的厚度（mum），x 2 < / SUB>是蓝宝石衬底的厚度（mm），Y 0 <0>为-107±2.5，A为24.13±0.50，B为141±4.5，T 1 < 为0.56±0.04，T <2>为0.265±0.5。}}

公开(公告)号：US20050133798A1

公开(公告)日：2005-06-23

申请号：US11017516

申请日：2004-12-20

Applicant: Hyun-Min Jung ,  Hae-Yong Lee ,  Hyun-Min Shin ,  Choon-Kon Kim ,  Chang-Ho Lee ,  Jeong-Wook Lee ,  Cheol-Soo Sone ,  Jae-Hee Cho

Inventor： Hyun-Min Jung ,  Hae-Yong Lee ,  Hyun-Min Shin ,  Choon-Kon Kim ,  Chang-Ho Lee ,  Jeong-Wook Lee ,  Cheol-Soo Sone ,  Jae-Hee Cho

IPC: C30B25/02 ,  C30B29/40 ,  H01L21/00 ,  H01L21/20 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/22 ,  H01L33/32 ,  H01L33/44 ,  H01L33/00

CPC classification number: H01L33/007 ,  C30B25/02 ,  C30B29/40 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

Abstract: A nitride semiconductor template having nano-voids at an interface between a substrate having one embossed surface and a nitride semiconductor layer can be rapidly prepared by hydride vapor phase epitaxy (HVPE) growth of the nitride semiconductor layer on the embossed surface of the substrate.

Abstract translation: 可以通过在衬底的压花表面上的氮化物半导体层的氢化物气相外延（HVPE）生长来快速制备具有在具有一个压花表面的衬底与氮化物半导体层之间的界面处的纳米空隙的氮化物半导体模板。