Invention Grant
- Patent Title: Semiconductor component and method of manufacture
- Patent Title (中): 半导体元件及制造方法
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Application No.: US10637406Application Date: 2003-08-08
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Publication No.: US07319065B1Publication Date: 2008-01-15
- Inventor: Wen Yu , Paul Raymond Besser
- Applicant: Wen Yu , Paul Raymond Besser
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Farjami & Farjami LLP
- Main IPC: H01L21/4763
- IPC: H01L21/4763
Abstract:
A semiconductor component having a composite via structure with an enhanced aspect ratio and a method for manufacturing the semiconductor component. Vias having a first aspect ratio are formed in a contact layer disposed on a semiconductor substrate and filled with a metal. The metal is planarized and a dielectric layer is formed over the contact layer. Via extension structures having the same aspect ratio as those in the contact layer are formed in the dielectric layer and aligned with the vias in the contact layer. The vias in the dielectric layer are filled with metal and the metal is planarized. The contact vias in the contact layer and the dielectric layer cooperate to form a composite via structure having the enhanced aspect ratio. Additional dielectric layers having via structures can be included in the composite contact structure to further enhance the aspect ratio of the via structure.
Information query
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