发明授权
- 专利标题： Semiconductor component and method of manufacture
- 专利标题（中）： 半导体元件及制造方法
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申请号： US10637406申请日： 2003-08-08
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公开(公告)号： US07319065B1公开(公告)日： 2008-01-15
- 发明人: Wen Yu , Paul Raymond Besser
- 申请人： Wen Yu , Paul Raymond Besser
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Farjami & Farjami LLP
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A semiconductor component having a composite via structure with an enhanced aspect ratio and a method for manufacturing the semiconductor component. Vias having a first aspect ratio are formed in a contact layer disposed on a semiconductor substrate and filled with a metal. The metal is planarized and a dielectric layer is formed over the contact layer. Via extension structures having the same aspect ratio as those in the contact layer are formed in the dielectric layer and aligned with the vias in the contact layer. The vias in the dielectric layer are filled with metal and the metal is planarized. The contact vias in the contact layer and the dielectric layer cooperate to form a composite via structure having the enhanced aspect ratio. Additional dielectric layers having via structures can be included in the composite contact structure to further enhance the aspect ratio of the via structure.