发明授权
US07319072B2 Polishing medium for chemical-mechanical polishing, and method of polishing substrate member
有权
用于化学机械抛光的抛光介质，以及抛光衬底构件的方法
- 专利标题： Polishing medium for chemical-mechanical polishing, and method of polishing substrate member
- 专利标题（中）： 用于化学机械抛光的抛光介质，以及抛光衬底构件的方法
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申请号： US11352326申请日： 2006-02-13
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公开(公告)号： US07319072B2公开(公告)日： 2008-01-15
- 发明人: Yasushi Kurata , Yasuo Kamigata , Takeshi Uchida , Hiroki Terasaki , Akiko Igarashi
- 申请人： Yasushi Kurata , Yasuo Kamigata , Takeshi Uchida , Hiroki Terasaki , Akiko Igarashi
- 申请人地址： JP Tokyo
- 专利权人： Hitachi Chemical Company, Ltd.
- 当前专利权人： Hitachi Chemical Company, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP11-230930 19990817; JP11-308665 19991029
- 主分类号： H01L21/461
- IPC分类号： H01L21/461 ; H01L21/302
摘要：
This invention provides a polishing medium for chemical-mechanical polishing, comprising an oxidizing agent for a conductor, a protective-film-forming agent for protecting a metal surface, an acid, and. water; (1) the polishing medium having a pH of 3 or less, and the oxidizing agent being in a concentration of from 0.01 to 3% by weight, or (2) the polishing medium containing abrasive grains having an average particle diameter of 50 nm or less, and the abrasive grains having standard deviation of particle size distribution in a value of more than 5 nm.
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