发明授权
- 专利标题： Thin film capacity element composition, high-permittivity insulation film, thin film capacity element, thin film multilayer capacitor, electronic circuit and electronic apparatus
- 专利标题（中）： 薄膜电容元件组成，高电容率绝缘膜，薄膜电容元件，薄膜多层电容器，电子电路和电子设备
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申请号： US10547134申请日： 2003-11-18
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公开(公告)号： US07319081B2公开(公告)日： 2008-01-15
- 发明人: Yukio Sakashita , Hiroshi Funakubo
- 申请人： Yukio Sakashita , Hiroshi Funakubo
- 申请人地址： JP Tokyo
- 专利权人： TDK Corporation
- 当前专利权人： TDK Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff & Berridge, PLC
- 优先权： JP2003-051897 20030227
- 国际申请： PCT/JP03/14651 WO 20031118
- 国际公布： WO2004/077460 WO 20040910
- 主分类号： C04B35/475
- IPC分类号： C04B35/475 ; H01L29/76
摘要：
A thin film capacity element composition includes a first bismuth layer-structured compound having positive temperature characteristics, that a specific permittivity rises as the temperature rises, in at least a part of a predetermined temperature range and a second bismuth layer-structured compound having negative temperature characteristics, that a specific permittivity declines as a temperature rises, in at least a part of said predetermined temperature range at any mixing ratio; wherein the bismuth layer-structured compound is expressed by a composition formula of CaxSr(1-x)Bi4Ti4O15.
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