发明授权
US07320927B2 In situ hardmask pullback using an in situ plasma resist trim process
有权
使用原位等离子体抗蚀剂修整工艺的原位硬掩模拉回
- 专利标题： In situ hardmask pullback using an in situ plasma resist trim process
- 专利标题（中）： 使用原位等离子体抗蚀剂修整工艺的原位硬掩模拉回
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申请号： US10689177申请日： 2003-10-20
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公开(公告)号： US07320927B2公开(公告)日： 2008-01-22
- 发明人: Juanita DeLoach , Brian A. Smith
- 申请人： Juanita DeLoach , Brian A. Smith
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Jacqueline J. Garner; W. James Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
The present invention provides a process of manufacturing an isolation structure for use in a semiconductor device. The process includes forming an opening in a substrate through a patterned photoresist layer 225 and a hardmask layer 215 located over the substrate 205 with plasma, trimming the photoresist layer 225 with a plasma to create an exposed portion 215a of the hardmask layer 215, removing the exposed portion 215a with a plasma to create a trench guide opening 227, and creating a trench 230 through the trench guide opening 227 with a plasma.