发明授权
US07323257B2 Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element 有权
陶瓷及其制造方法,介质电容器,半导体器件和元件

Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element
摘要:
A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.
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