发明授权
- 专利标题: Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element
- 专利标题(中): 陶瓷及其制造方法,介质电容器,半导体器件和元件
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申请号: US11314996申请日: 2005-12-23
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公开(公告)号: US07323257B2公开(公告)日: 2008-01-29
- 发明人: Eiji Natori , Takeshi Kijima , Koichi Furuyama , Yuzo Tasaki
- 申请人: Eiji Natori , Takeshi Kijima , Koichi Furuyama , Yuzo Tasaki
- 申请人地址: JP Tokyo
- 专利权人: Seiko Epson Corporation
- 当前专利权人: Seiko Epson Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff & Berridge, PLC
- 优先权: JP2001-178840 20010613; JP2001-193048 20010626; JP2002-86139 20020326
- 主分类号: B43B9/00
- IPC分类号: B43B9/00
摘要:
A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.
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