Invention Grant
- Patent Title: Ion beam processing method
- Patent Title (中): 离子束处理方法
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Application No.: US10543843Application Date: 2004-02-16
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Publication No.: US07323685B2Publication Date: 2008-01-29
- Inventor: Kazuo Aita , Osamu Takaoka , Tomokazu Kozakai
- Applicant: Kazuo Aita , Osamu Takaoka , Tomokazu Kozakai
- Applicant Address: JP
- Assignee: SII Nano Technology Inc.
- Current Assignee: SII Nano Technology Inc.
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2003-039081 20030218
- International Application: PCT/JP2004/001658 WO 20040216
- International Announcement: WO2004/075240 WO 20040902
- Main IPC: H01J37/304
- IPC: H01J37/304

Abstract:
When scanning by an ion beam in advance an area 24 including a reference hole 23 formed at a position other than the area to be processed 25 of a light-shielding film 21 on a glass substrate 22, a secondary ion signal of the same atom as the incident ions injected into the substrate is detected instead of detecting the secondary ion signal of the atoms included in the base film, and the position 23 of the hole is stored. Then, the area 24 including the hole formed during the processing is scanned and the secondary ion signal of the same atom as the incident ions is detected to determine the current position 26 of the hole, the position of the hole obtained by the previous detection and the current position of the hole are compared, and the amount of shift of the position of the hole is determined. This shifted amount is regarded as the drift amount.
Public/Granted literature
- US20060097194A1 Ion beam processing method Public/Granted day:2006-05-11
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