发明授权
US07323729B2 Methods for improving quality of high temperature oxide (HTO) formed from halogen-containing precursor and products thereof and apparatus therefor
有权
用于提高由含卤素前体及其产物形成的高温氧化物（HTO）的质量的方法及其设备
- 专利标题： Methods for improving quality of high temperature oxide (HTO) formed from halogen-containing precursor and products thereof and apparatus therefor
- 专利标题（中）： 用于提高由含卤素前体及其产物形成的高温氧化物（HTO）的质量的方法及其设备
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申请号： US11431087申请日： 2006-05-04
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公开(公告)号： US07323729B2公开(公告)日： 2008-01-29
- 发明人: Zhong Dong , Chuck Jang , Chia-Shun Hsiao
- 申请人： Zhong Dong , Chuck Jang , Chia-Shun Hsiao
- 申请人地址： TW Hsin-Chu
- 专利权人： Promos Technologies Inc.
- 当前专利权人： Promos Technologies Inc.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： MacPherson Kwok Chen & Heid LLP
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A method and apparatus are disclosed for reducing the concentration of chlorine and/or other bound contaminants within a semiconductor oxide composition that is formed by chemical vapor deposition (CVD) using a semiconductor-element-providing reactant such as dichlorosilane (DCS) and an oxygen-providing reactant such as N2O. In one embodiment, a DCS-HTO film is annealed by heating N2O gas to a temperature in the range of about 825° C. to about 950° C. so as to trigger exothermic decomposition of the N2O gas and flowing the heated gas across the DCS-HTO film so that disassociated atomic oxygen radicals within the heated N2O gas can transfer disassociating energy to chlorine atoms bound within the DCS-HTO film and so that the atomic oxygen radicals can fill oxygen vacancies within the semiconductor-oxide matrix of DCS-HTO film. An improved ONO structure may be formed with the annealed DCS-HTO film for use in floating gate or other memory applications.
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