发明授权
- 专利标题: Thin film resistor integration in a dual damascene structure
- 专利标题(中): 薄膜电阻集成在双镶嵌结构中
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申请号: US10453701申请日: 2003-06-03
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公开(公告)号: US07323751B2公开(公告)日: 2008-01-29
- 发明人: Eric Williams Beach , Rajneesh Jaiswal
- 申请人: Eric Williams Beach , Rajneesh Jaiswal
- 申请人地址: US TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: US TX Dallas
- 代理商 Wade James Brady, III; Frederick J. Telecky, Jr.
- 主分类号: H01L29/72
- IPC分类号: H01L29/72
摘要:
A thin film resistor and at least one metal interconnect are formed in an integrated circuit. A first dielectric layer is formed over a metal interconnect layer. A thin film resistor is formed on the first dielectric layer and a second dielectric layer formed over the thin film resistor. Thin film resistor vias and the at least one trench are formed concurrently in the second dielectric layer. A trench via is then formed in the at least one trench. The trench via, the at least one trench and the thin film resistor vias are filled with a contact material layer to form thin film resistor contacts and at least one conductive line coupled to the metal interconnect layer.