- 专利标题： Electrode, method for producing same and semiconductor device using same
-
申请号： US10574933申请日： 2004-12-06
-
公开(公告)号： US07323783B2公开(公告)日： 2008-01-29
- 发明人: Tatsuo Nakayama , Hironobu Miyamoto , Yuji Ando , Takashi Inoue , Yasuhiro Okamoto , Masaaki Kuzuhara
- 申请人： Tatsuo Nakayama , Hironobu Miyamoto , Yuji Ando , Takashi Inoue , Yasuhiro Okamoto , Masaaki Kuzuhara
- 申请人地址： JP Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Foley & Lardner LLP
- 优先权： JP2003-409512 20031208
- 国际申请： PCT/JP2004/018140 WO 20041206
- 国际公布： WO2005/057641 WO 20050623
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/44
摘要：
There is provided a technology for obtaining an electrode having a low contact resistance and less surface roughness. There is provided an electrode comprising a semiconductor film 101, and a first metal layer 102 and a second metal layer 103 sequentially stacked in this order on the semiconductor film 101, characterized in that the first metal film 102 is formed of Al, and the second metal film 103 is formed of at least one metal selected from the group consisting of Nb, W, Fe, Hf, Re, Ta and Zr.
公开/授权文献
信息查询
IPC分类:
