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    Ohmic electrode structure of nitride semiconductor device
    4.
    发明申请
    Ohmic electrode structure of nitride semiconductor device 失效
    氮化物半导体器件的欧姆电极结构

    公开(公告)号：US20070164305A1

    公开(公告)日：2007-07-19

    申请号：US10590730

    申请日：2005-02-28

    申请人： Tatsuo Nakayama ,  Yuji Ando ,  Hironobu Miyamoto ,  Masaaki Kuzuhara ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Koji Hataya

    发明人： Tatsuo Nakayama ,  Yuji Ando ,  Hironobu Miyamoto ,  Masaaki Kuzuhara ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Koji Hataya

    IPC分类号： H01L33/00

    CPC分类号： H01L33/40 ,  H01L33/32

    摘要： An ohmic electrode structure of a nitride semiconductor device having a nitride semiconductor. The ohmic electrode structure is provided with a first metal film formed on the nitride semiconductor and a second metal film formed on the first metal film. The first metal film is composed of at least one material selected from a group consisting of V, Mo, Ti, Nb, W, Fe, Hf, Re, Ta and Zr. The second metal film is composed of at least one material different from that of the first metal film (102), selected from a group consisting of V, Mo, Ti, Nb, W, Fe, Hf, Re, Ta, Zr, Pt and Au.

    摘要翻译： 具有氮化物半导体的氮化物半导体器件的欧姆电极结构。 欧姆电极结构设置有形成在氮化物半导体上的第一金属膜和形成在第一金属膜上的第二金属膜。 第一金属膜由选自V，Mo，Ti，Nb，W，Fe，Hf，Re，Ta和Zr中的至少一种材料构成。 第二金属膜由与V，Mo，Ti，Nb，W，Fe，Hf，Re，Ta，Zr，Pt中的至少一种不同于第一金属膜（102）的材料构成。 和Au。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07859014B2

    公开(公告)日：2010-12-28

    申请号：US11571290

    申请日：2005-06-24

    申请人： Tatsuo Nakayama ,  Hironobu Miyamoto ,  Yuji Ando ,  Masaaki Kuzuhara ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Koji Hataya

    发明人： Tatsuo Nakayama ,  Hironobu Miyamoto ,  Yuji Ando ,  Masaaki Kuzuhara ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Koji Hataya

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/78

    摘要： The present invention provides a semiconductor device capable of suppressing current collapse, and also of preventing dielectric breakdown voltage and gain from lowering so as to perform high-voltage operation and realize an ideal high output. On a substrate (101), there are formed a buffer layer (102) made of a first GaN-based semiconductor, a carrier traveling layer (103) made of a second GaN-based semiconductor and a carrier supplying layer (104) made of a third GaN-based semiconductor. A recess structure (108) is made by eliminating a part of a first insulation film (107) and a part of the carrier supplying layer (104). Next, a gate insulation film (109) is deposited, and then a gate electrode (110) is formed so as to fill up the recess portion (108) and cover on over an area where the first insulation film (107) remains so that its portion on the drain electrode side is longer than that on the source electrode side. Such a recess structure is employed so as to provide the high-output semiconductor device capable of performing the high-voltage operation.

    摘要翻译： 本发明提供一种能够抑制电流塌陷以及防止电介质击穿电压和增益降低的半导体器件，从而进行高压操作并实现理想的高输出。 在基板（101）上形成有由第一GaN基半导体构成的缓冲层（102），由第二GaN基半导体构成的载流子移动层（103）和由 第三GaN基半导体。 通过消除第一绝缘膜（107）的一部分和载体供给层（104）的一部分来制造凹陷结构（108）。 接下来，沉积栅极绝缘膜（109），然后形成栅极电极（110），以填充凹部（108）并覆盖在第一绝缘膜（107）保留的区域上，使得 其漏电极侧的部分比源电极侧的部分长。 采用这样的凹部结构来提供能够执行高电压操作的高输出半导体器件。

    Ohmic electrode structure of nitride semiconductor device
    6.
    发明授权
    Ohmic electrode structure of nitride semiconductor device 失效
    氮化物半导体器件的欧姆电极结构

    公开(公告)号：US07459788B2

    公开(公告)日：2008-12-02

    申请号：US10590730

    申请日：2005-02-28

    申请人： Tatsuo Nakayama ,  Yuji Ando ,  Hironobu Miyamoto ,  Masaaki Kuzuhara ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Koji Hataya

    发明人： Tatsuo Nakayama ,  Yuji Ando ,  Hironobu Miyamoto ,  Masaaki Kuzuhara ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Koji Hataya

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L33/40 ,  H01L33/32

    摘要： An ohmic electrode structure of a nitride semiconductor device having a nitride semiconductor. The ohmic electrode structure is provided with a first metal film formed on the nitride semiconductor and a second metal film formed on the first metal film. The first metal film is composed of at least one material selected from a group consisting of V, Mo, Ti, Nb, W, Fe, Hf, Re, Ta and Zr. The second metal film is composed of at least one material different from that of the first metal film (102), selected from a group consisting of V, Mo, Ti, Nb, W, Fe, Hf, Re, Ta, Zr, Pt and Au.

    摘要翻译： 具有氮化物半导体的氮化物半导体器件的欧姆电极结构。 欧姆电极结构设置有形成在氮化物半导体上的第一金属膜和形成在第一金属膜上的第二金属膜。 第一金属膜由选自V，Mo，Ti，Nb，W，Fe，Hf，Re，Ta和Zr中的至少一种材料构成。 第二金属膜由与V，Mo，Ti，Nb，W，Fe，Hf，Re，Ta，Zr，Pt等组成的组中的至少一种不同于第一金属膜的材料构成 和Au。

    Semiconductor device
    7.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US20070158692A1

    公开(公告)日：2007-07-12

    申请号：US11571290

    申请日：2005-06-24

    申请人： Tatsuo Nakayama ,  Hironobu Miyamoto ,  Yuji Ando ,  Masaaki Kuzuhara ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Koji Hataya

    发明人： Tatsuo Nakayama ,  Hironobu Miyamoto ,  Yuji Ando ,  Masaaki Kuzuhara ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Koji Hataya

    IPC分类号： H01L29/76

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/78

    摘要： The present invention provides a semiconductor device capable of suppressing current collapse, and also of preventing dielectric breakdown voltage and gain from lowering so as to perform high-voltage operation and realize an ideal high output. On a substrate (101), there are formed a buffer layer (102) made of a first GaN-based semiconductor, a carrier traveling layer (103) made of a second GaN-based semiconductor and a carrier supplying layer (104) made of a third GaN-based semiconductor. A recess structure (108) is made by eliminating a part of a first insulation film (107) and a part of the carrier supplying layer (104). Next, a gate insulation film (109) is deposited, and then a gate electrode (110) is formed so as to fill up the recess portion (108) and cover on over an area where the first insulation film (107) remains so that its portion on the drain electrode side is longer than that on the source electrode side. Such a recess structure is employed so as to provide the high-output semiconductor device capable of performing the high-voltage operation.

    摘要翻译： 本发明提供一种能够抑制电流塌陷以及防止电介质击穿电压和增益降低的半导体器件，从而进行高压操作并实现理想的高输出。 在基板（101）上形成有由第一GaN基半导体构成的缓冲层（102），由第二GaN基半导体构成的载流子移动层（103）和由 第三GaN基半导体。 通过消除第一绝缘膜（107）的一部分和载体供给层（104）的一部分来制造凹陷结构（108）。 接下来，沉积栅极绝缘膜（109），然后形成栅电极（110），以填充凹部（108）并覆盖在第一绝缘膜（107）保留的区域上，使得 其漏电极侧的部分比源电极侧的部分长。 采用这样的凹部结构来提供能够执行高电压操作的高输出半导体器件。