发明授权
- 专利标题： Film bulk acoustic resonator and method of producing the same
- 专利标题（中）： 薄膜体声共振器及其制造方法
-
申请号： US10926329申请日： 2004-08-26
-
公开(公告)号： US07323953B2公开(公告)日： 2008-01-29
- 发明人: Tsuyoshi Yokoyama , Takeshi Sakashita , Tokihiro Nishihara , Tsutomu Miyashita , Yoshio Satoh
- 申请人： Tsuyoshi Yokoyama , Takeshi Sakashita , Tokihiro Nishihara , Tsutomu Miyashita , Yoshio Satoh
- 申请人地址： JP Yokohama JP Kawasaki
- 专利权人： Fujitsu Media Devices Limited,Fujitsu Limited
- 当前专利权人： Fujitsu Media Devices Limited,Fujitsu Limited
- 当前专利权人地址： JP Yokohama JP Kawasaki
- 代理机构： Arent Fox LLP
- 优先权： JP2003-303707 20030827
- 主分类号： H03H9/00
- IPC分类号： H03H9/00
摘要：
A film bulk acoustic resonator includes: a piezoelectric thin film that is formed on a principal surface of a substrate; and a lower electrode and an upper electrode that are arranged to sandwich the piezoelectric thin film. In this film bulk acoustic resonator, the piezoelectric thin film is made of aluminum nitride, and at least one of the lower electrode and the upper electrode contains a ruthenium or ruthenium-alloy layer.