摘要:
A filter device includes a filter element that has piezoelectric thin-film resonators arranged in series arms and parallel arms, and a package that houses the filter element in a face-down state. In this filter device, the filter element and the package are electrically connected to each other through bumps. The package includes first pad parts on which the bumps are placed, and transmission paths that electrically connect the first pad parts to the outside. The filter element includes second pad parts that are electrically connected to the first pad parts through the bumps, and wiring parts that electrically connect the second pads to the piezoelectric thin-film resonators and electrically connect the piezoelectric thin-film resonators to one another. In this structure, inductances formed with the transmission paths are connected in series to the piezoelectric thin-film resonators.
摘要:
A film bulk acoustic resonator includes: a piezoelectric thin film that is formed on a principal surface of a substrate; and a lower electrode and an upper electrode that are arranged to sandwich the piezoelectric thin film. In this film bulk acoustic resonator, the piezoelectric thin film is made of aluminum nitride, and at least one of the lower electrode and the upper electrode contains a ruthenium or ruthenium-alloy layer.
摘要:
A film bulk acoustic resonator includes: a piezoelectric thin film that is formed on a principal surface of a substrate; and a lower electrode and an upper electrode that are arranged to sandwich the piezoelectric thin film. In this film bulk acoustic resonator, the piezoelectric thin film is made of aluminum nitride, and at least one of the lower electrode and the upper electrode contains a ruthenium or ruthenium-alloy layer.
摘要:
This invention relates to a surface acoustic wave device and a production process thereof. An electrode is formed by alternately laminating a film of an aluminum alloy containing at least copper added thereto and a copper film on a piezoelectric substrate. While the particle size of the multi-layered electrode materials in kept small, the occurrence of voids in the film is prevented and life time of the surface acoustic wave device is elongated.
摘要:
A surface acoustic wave device includes a substrate at least a surface of which has a piezoelectric function, and an electrode formed on the substrate, wherein the electrode is composed of a first film of Al containing Cu at or over a solid solubility limit of Cu to Al and one or more unit(s) of a second film of Al containing Mg at or over a Solid solubility limit of Mg to Al and a third film of Al containing Cu at or over the solid solubility limit of Cu to Al formed on the first film in this order, and the first film and the third film contain Mg diffused from the second film.
摘要:
An antenna duplexer including two duplexer elements each including two surface acoustic wave filters having different center pass band frequencies and connecting terminals for connecting the duplexer elements and external circuits, which are grouped into an antenna terminal group for connection to an external antenna, a receiving terminal group for connection to an external circuit and a transmitting terminal group for connection to an external circuit, wherein regions for disposing the antenna terminal group, the receiving terminal group and the transmitting terminal group are separated planarly.
摘要:
This invention relates to a surface acoustic wave device and a production process thereof. An electrode is formed by alternately laminating a film of an aluminum alloy containing at least copper added thereto and a copper film on a piezoelectric substrate. While the particle size of the multi-layered electrode materials is kept small, the occurrence of voids in the film is prevented and life time of the surface acoustic wave device is elongated.
摘要:
A method of manufacturing a surface acoustic device having an electrode containing an Al and an other metal comprising; forming patterning a layer of an Al and other metal forming the electrode by reactive ion etching which is conducted by using an etching gas containing a mixed gas comprising Cl2 and He at a gas pressure of 0.1 Pa to 3 Pa.
摘要:
In A surface acoustic wave filter constituted with a ladder of resonators having a resonance frequency or an anti-resonance frequency, an input current flowing into a resonator in a parallel arm at the first stage from the input is so large as to deteriorate its lifetime caused from a heat generation by the resistance of the thin film wiring. As a measure to this problem, bonding wires (30, 31) connected onto points on connection electrodes (130, 131) for connecting an end of each of plural comb teeth electrodes 111 forming the resonators Rs1 & Rp1, or on a lead conductor (103-1) extended longitudinally from the connection electrode, are allotted at both sides of a center line (C1) of the plural comb teeth electrode group. Furthermore, a bonding wire may be connected substantially onto the center line C1 as well. It is preferable for the bonding wires to be located substantially symmetric with respect to the center line C1. It is preferable that the width along the longitudinal direction of the comb teeth electrodes is lager than a width of the comb teeth electrode.
摘要:
A method of producing a SAW (Surface Acoustic Wave) device, including the steps of implanting ions in an entire surface of a piezoelectric member of the SAW device, so that an ion implantation layer is formed therein; performing a heat treatment of the piezoelectric member, so that a heat-treated ion implantation layer is formed in the entire surface of the piezoelectric member; and providing an electrode of a comb type resonator on the heat-treated ion implantation layer.