Invention Grant
US07326643B2 Method of making circuitized substrate with internal organic memory device
失效
制造具有内部有机存储器件的电路化衬底的方法
- Patent Title: Method of making circuitized substrate with internal organic memory device
- Patent Title (中): 制造具有内部有机存储器件的电路化衬底的方法
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Application No.: US11808596Application Date: 2007-06-12
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Publication No.: US07326643B2Publication Date: 2008-02-05
- Inventor: Subahu D. Desai , How T. Lin , John M. Lauffer , Voya R. Markovich , David L. Thomas
- Applicant: Subahu D. Desai , How T. Lin , John M. Lauffer , Voya R. Markovich , David L. Thomas
- Applicant Address: US NY Endicott
- Assignee: Endicott Interconnect Technologies, Inc.
- Current Assignee: Endicott Interconnect Technologies, Inc.
- Current Assignee Address: US NY Endicott
- Agency: Hinman, Howard & Kattell, LLP
- Agent Lawrence R. Fraley
- Main IPC: H01L21/4751
- IPC: H01L21/4751
Abstract:
A method of making circuitized substrate comprised of at least one dielectric material having an electrically conductive pattern thereon. At least part of the pattern is used as the first layer of an organic memory device which further includes at least a second dielectric layer over the pattern and a second pattern aligned with respect to the lower part for achieving several points of contact to thus form the device.
Public/Granted literature
- US20070249089A1 Method of making circuitized substrate with internal organic memory device Public/Granted day:2007-10-25
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