Invention Grant
- Patent Title: Photodetector and photodetecting device
- Patent Title (中): 光电检测器和光电检测器
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Application No.: US11143637Application Date: 2005-06-03
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Publication No.: US07326936B2Publication Date: 2008-02-05
- Inventor: Katsuya Kawano , Akihiro Kawahara
- Applicant: Katsuya Kawano , Akihiro Kawahara
- Applicant Address: JP Kanagawa JP Tokyo
- Assignee: NEC Electronics Corporation,NEC Corporation
- Current Assignee: NEC Electronics Corporation,NEC Corporation
- Current Assignee Address: JP Kanagawa JP Tokyo
- Agency: Young & Thompson
- Priority: JP2004-175732 20040614
- Main IPC: G01T1/24
- IPC: G01T1/24

Abstract:
An infrared detector includes a silicon substrate, an infrared reflecting film, a diaphragm including a bolometer thin film, disposed above the silicon substrate across a gap, and a signal line that electrically connects the bolometer thin film and the infrared reflecting film, such that the bolometer thin film and the infrared reflecting film constantly become equipotential with each other. In place of the signal line, a conductor independently provided from interconnects in the silicon substrate may be employed.
Public/Granted literature
- US20050274896A1 Photodector and photodetecting device Public/Granted day:2005-12-15
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