Bolometer-type infrared imaging apparatus including a one or two dimensional sensor array semiconductor device
    1.
    发明授权
    Bolometer-type infrared imaging apparatus including a one or two dimensional sensor array semiconductor device 有权
    包含一维或二维传感器阵列半导体器件的热辐射计型红外成像设备

    公开(公告)号:US07994466B2

    公开(公告)日:2011-08-09

    申请号:US12649981

    申请日:2009-12-30

    申请人: Katsuya Kawano

    发明人: Katsuya Kawano

    IPC分类号: H01J40/14 H01L27/00

    摘要: Disclosed is a bolometer infrared imaging device including a plural number of readout circuits, each comprising a bias circuit that includes a bias transistor that supplies a constant voltage to a bolometer device, a bias cancellation circuit that includes a canceller transistor that removes offset current component of the bolometer device and an integrating operational amplifier that integrates the difference current between the current flowing in the bias transistor and that flowing in the canceller transistor. The bias circuit includes a source follower circuit that receives a first input voltage and supplies an output voltage to the gate of the bias transistor. The bias cancellation circuit includes a source follower circuit that receives a second input voltage and supplies an output voltage to the gate of the canceller transistor.

    摘要翻译: 公开了一种测辐射热计红外成像装置,包括多个读出电路,每个读出电路包括偏置电路,该偏置电路包括向测辐射热计装置提供恒定电压的偏置晶体管;偏置消除电路,包括消除晶体管,其消除偏移电流分量 测辐射热计装置和集成运算放大器,其积分在偏置晶体管中流动的电流和在消除晶体管中流动的电流之间的差电流。 偏置电路包括源极跟随器电路,其接收第一输入电压并将输出电压提供给偏置晶体管的栅极。 偏置消除电路包括源极跟随器电路,其接收第二输入电压并将输出电压提供给消除器晶体管的栅极。

    Bolometer-type infrared imaging apparatus including a one or two dimensional sensor array semiconductor device
    2.
    发明授权
    Bolometer-type infrared imaging apparatus including a one or two dimensional sensor array semiconductor device 有权
    包含一维或二维传感器阵列半导体器件的热辐射计型红外成像设备

    公开(公告)号:US07663088B2

    公开(公告)日:2010-02-16

    申请号:US11826086

    申请日:2007-07-12

    申请人: Katsuya Kawano

    发明人: Katsuya Kawano

    IPC分类号: H01J40/14 H01L27/00

    摘要: Disclosed is a bolometer infrared imaging device including a plural number of readout circuits, each comprising a bias circuit that includes a bias transistor that supplies a constant voltage to a bolometer device, a bias cancellation circuit that includes a canceller transistor that removes offset current component of the bolometer device and an integrating operational amplifier that integrates the difference current between the current flowing in the bias transistor and that flowing in the canceller transistor. The bias circuit includes a source follower circuit that receives a first input voltage and supplies an output voltage to the gate of the bias transistor. The bias cancellation circuit includes a source follower circuit that receives a second input voltage and supplies an output voltage to the gate of the canceller transistor.

    摘要翻译: 公开了一种测辐射热计红外成像装置,包括多个读出电路,每个读出电路包括偏置电路,该偏置电路包括向测辐射热计装置提供恒定电压的偏置晶体管;偏置消除电路,包括消除晶体管,其消除偏移电流分量 测辐射热计装置和集成运算放大器,其积分在偏置晶体管中流动的电流和在消除晶体管中流动的电流之间的差电流。 偏置电路包括源极跟随器电路,其接收第一输入电压并将输出电压提供给偏置晶体管的栅极。 偏置消除电路包括源极跟随器电路,其接收第二输入电压并将输出电压提供给消除器晶体管的栅极。

    Photodetector and photodetecting device
    3.
    发明授权
    Photodetector and photodetecting device 有权
    光电检测器和光电检测器

    公开(公告)号:US07326936B2

    公开(公告)日:2008-02-05

    申请号:US11143637

    申请日:2005-06-03

    IPC分类号: G01T1/24

    CPC分类号: G01J5/20

    摘要: An infrared detector includes a silicon substrate, an infrared reflecting film, a diaphragm including a bolometer thin film, disposed above the silicon substrate across a gap, and a signal line that electrically connects the bolometer thin film and the infrared reflecting film, such that the bolometer thin film and the infrared reflecting film constantly become equipotential with each other. In place of the signal line, a conductor independently provided from interconnects in the silicon substrate may be employed.

    摘要翻译: 一种红外检测器,包括硅衬底,红外反射膜,包括测辐射热计薄膜的隔膜,设置在跨越间隙的硅衬底上方,以及信号线,其将测辐射热计薄膜和红外反射膜电连接,使得 测辐射热计薄膜和红外线反射膜不断变得等电位。 代替信号线,可以采用独立于硅衬底中的互连提供的导体。

    Thermal type infrared ray detector with thermal separation structure for high sensitivity
    4.
    发明授权
    Thermal type infrared ray detector with thermal separation structure for high sensitivity 有权
    热式红外线探测器具有热分离结构,灵敏度高

    公开(公告)号:US06441374B1

    公开(公告)日:2002-08-27

    申请号:US09621854

    申请日:2000-07-24

    IPC分类号: G01J500

    CPC分类号: G01J5/20 G01J5/34

    摘要: A thermal type infrared ray detector with a thermal separation structure includes a plurality of picture elements. Each of the plurality of picture elements includes a circuit formed in a substrate for every picture element, and a light receiving section converting infrared rays into change of a resistance or a charge quantity. The circuit generates a voltage signal from the resistance change or the charge quantity change. Beams mechanically support the light receiving section from the substrate to form a gap between the light receiving section and the substrate, and electrically connect the light receiving section to the circuit. Each of the beams includes a wiring line film formed of Ti alloy and connecting the light receiving section to the circuit, and a protective insulating film surrounding the wiring line film. In this case, the Ti alloy may be TiAl6V4.

    摘要翻译: 具有热分离结构的热式红外线检测器包括多个像素。 多个像素中的每一个都包括形成在每个像素的基板中的电路和将红外线转换成电阻或电荷量的变化的光接收部。 该电路从电阻变化或电荷量变化产生电压信号。 光束从基板机械地支撑光接收部分,以在光接收部分和基板之间形成间隙,并将光接收部分电连接到电路。 每个光束包括由Ti合金形成并将光接收部分连接到电路的布线膜,以及围绕布线膜的保护绝缘膜。 在这种情况下,Ti合金可以是TiAl6V4。

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20100102231A1

    公开(公告)日:2010-04-29

    申请号:US12649981

    申请日:2009-12-30

    申请人: KATSUYA KAWANO

    发明人: KATSUYA KAWANO

    IPC分类号: G01J5/20 G05F1/10

    摘要: Disclosed is a bolometer infrared imaging device including a plural number of readout circuits, each comprising a bias circuit that includes a bias transistor that supplies a constant voltage to a bolometer device, a bias cancellation circuit that includes a canceller transistor that removes offset current component of the bolometer device and an integrating operational amplifier that integrates the difference current between the current flowing in the bias transistor and that flowing in the canceller transistor. The bias circuit includes a source follower circuit that receives a first input voltage and supplies an output voltage to the gate of the bias transistor. The bias cancellation circuit includes a source follower circuit that receives a second input voltage and supplies an output voltage to the gate of the canceller transistor.

    摘要翻译: 公开了一种测辐射热计红外成像装置,包括多个读出电路,每个读出电路包括偏置电路,该偏置电路包括向测辐射热计装置提供恒定电压的偏置晶体管;偏置消除电路,包括消除晶体管,其消除偏移电流分量 测辐射热计装置和集成运算放大器,其积分在偏置晶体管中流动的电流和在消除晶体管中流动的电流之间的差电流。 偏置电路包括源极跟随器电路,其接收第一输入电压并将输出电压提供给偏置晶体管的栅极。 偏置消除电路包括源极跟随器电路,其接收第二输入电压并将输出电压提供给消除器晶体管的栅极。

    Semiconductor device
    7.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US20080048763A1

    公开(公告)日:2008-02-28

    申请号:US11826086

    申请日:2007-07-12

    申请人: Katsuya Kawano

    发明人: Katsuya Kawano

    IPC分类号: G05F1/10

    摘要: Disclosed is a bolometer infrared imaging device including a plural number of readout circuits, each comprising a bias circuit that includes a bias transistor that supplies a constant voltage to a bolometer device, a bias cancellation circuit that includes a canceller transistor that removes offset current component of the bolometer device and an integrating operational amplifier that integrates the difference current between the current flowing in the bias transistor and that flowing in the canceller transistor. The bias circuit includes a source follower circuit that receives a first input voltage and supplies an output voltage to the gate of the bias transistor. The bias cancellation circuit includes a source follower circuit that receives a second input voltage and supplies an output voltage to the gate of the canceller transistor.

    摘要翻译: 公开了一种测辐射热计红外成像装置,包括多个读出电路,每个读出电路包括偏置电路,该偏置电路包括向测辐射热计装置提供恒定电压的偏置晶体管;偏置消除电路,包括消除晶体管,其消除偏移电流分量 测辐射热计装置和集成运算放大器,其积分在偏置晶体管中流动的电流和在消除晶体管中流动的电流之间的差电流。 偏置电路包括源极跟随器电路,其接收第一输入电压并将输出电压提供给偏置晶体管的栅极。 偏置消除电路包括源极跟随器电路,其接收第二输入电压并将输出电压提供给消除器晶体管的栅极。

    Hermetically sealed battery
    8.
    发明授权
    Hermetically sealed battery 有权
    密封电池

    公开(公告)号:US07335439B2

    公开(公告)日:2008-02-26

    申请号:US10792908

    申请日:2004-03-05

    IPC分类号: H01M2/12 H01M10/50 H01M2/08

    摘要: A hermetically sealed battery is provided, equipped with a opening sealing unit 10 including a Positive Temperature Coefficient (PTC) element without reducing the volume of the outside can, and capable of preventing the generation of a large current in case a short circuit occurs as well as enhancing operational security. The opening sealing unit 10 according to the invention comprises a bottom plate 11 for closing the opening of the outside can 18, a positive electrode cap 12 forming a space for storing a pressure valve, said positive electrode cap being used as a terminal for the positive electrode, a resilient valve 14 having a steel plate 14a on the upper surface, a spring 15 and a PTC element ring 16 disposed on the flange 12a in the positive electrode cap 12. An insulation gasket 17 is mounted onto the periphery of the opening sealing unit 10 to hermetically close the opening of the outside can 18.

    摘要翻译: 提供了一种气密密封的电池,其配备有包括正温度系数(PTC)元件的开口密封单元10,而不会减小外罐的体积,并且能够在发生短路的情况下防止产生大电流 加强运营安全。 根据本发明的开口密封单元10包括用于封闭外罐18的开口的底板11,形成用于存储压力阀的空间的正电极盖12,所述正极帽用作阳极的端子 电极,具有上表面上的钢板14a的弹性阀14,弹簧15和设置在正极帽12中的凸缘12a上的PTC元件环16。 绝缘垫片17安装在开口密封单元10的周边上,以密封地关闭外罐18的开口。

    Photodector and photodetecting device
    9.
    发明申请
    Photodector and photodetecting device 有权
    光电探测器和光电探测器

    公开(公告)号:US20050274896A1

    公开(公告)日:2005-12-15

    申请号:US11143637

    申请日:2005-06-03

    CPC分类号: G01J5/20

    摘要: An infrared detector includes a silicon substrate, an infrared reflecting film, a diaphragm including a borometer thin film, disposed above the silicon substrate across a gap, and a signal line that electrically connects the barometer thin film and the infrared reflecting film, such that the barometer thin film and the infrared reflecting film constantly become equipotential with each other. In place of the signal line, a conductor independently provided from interconnects in the silicon substrate may be employed.

    摘要翻译: 红外检测器包括硅衬底,红外反射膜,包括硼光体薄膜的膜片,设置在跨过间隙的硅衬底上方,以及信号线,其将气压计薄膜和红外反射膜电连接,使得 气压计薄膜和红外线反射膜不断变得彼此等电位。 代替信号线,可以采用独立地从硅衬底中的互连提供的导体。

    Oxide thin film for bolometer and infrared detector using the oxide thin film
    10.
    发明授权
    Oxide thin film for bolometer and infrared detector using the oxide thin film 有权
    氧化薄膜用于测辐射热计和红外探测器使用氧化物薄膜

    公开(公告)号:US06489613B1

    公开(公告)日:2002-12-03

    申请号:US09387878

    申请日:1999-09-01

    IPC分类号: H01L3109

    摘要: An oxide thin film for bolometer having a vanadium oxide represented by VOx, where x satisfies 1.5≦x≦2.0, part of vanadium ion in the vanadium oxide being substituted by metal ion M, where the metal ion M is at least one of chromium (Cr), aluminum (Al), iron (Fe), manganese (Mn), niobium (Nb), tantalum (Ta) and titanium (Ti). Also, provided is an infrared detector having a bolometer thin film defined above. The oxide thin film for bolometer offers a low resistivity and a large TCR value. Also, the infrared detector offers a finer temperature resolution capability (NETD) as low as 0.03° C.

    摘要翻译: 一种用于具有由VOx表示的氧化钒的测辐射热计的氧化物薄膜,其中x满足1.5 <= x <= 2.0,氧化钒中的钒离子的一部分被金属离子M取代,其中金属离子M是 铬(Cr),铝(Al),铁(Fe),锰(Mn),铌(Nb),钽(Ta)和钛(Ti)。 而且,提供了一种具有上述定影仪薄膜的红外检测器。 测辐射热计的氧化物薄膜具有低电阻率和较大的TCR值。 此外,红外检测器可提供低至0.03°C的更精细的温度分辨能力(NETD)。