Invention Grant
- Patent Title: Gallium nitride based high-electron mobility devices
- Patent Title (中): 基于氮化镓的高电子迁移率器件
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Application No.: US11147341Application Date: 2005-06-08
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Publication No.: US07326971B2Publication Date: 2008-02-05
- Inventor: Christopher Harris , Thomas Gehrke , T. Warren Weeks, Jr. , Cem Basceri
- Applicant: Christopher Harris , Thomas Gehrke , T. Warren Weeks, Jr. , Cem Basceri
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Main IPC: H01L29/778
- IPC: H01L29/778
Abstract:
A heterojunction device includes a first layer of p-type aluminum gallium nitride; a second layer of undoped gallium nitride on the first layer; a third layer of aluminum gallium nitride on the second layer; and an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.
Public/Granted literature
- US20060278892A1 Gallium nitride based high-electron mobility devices Public/Granted day:2006-12-14
Information query
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