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    Method of manufacturing an adaptive AIGaN buffer layer
    1.
    发明授权
    Method of manufacturing an adaptive AIGaN buffer layer 有权
    制造自适应AIGaN缓冲层的方法

    公开(公告)号：US07485512B2

    公开(公告)日：2009-02-03

    申请号：US11474431

    申请日：2006-06-26

    申请人： Christopher Harris ,  Thomas Gehrke ,  T. Warren Weeks, Jr. ,  Cem Basceri ,  Elif Berkman

    发明人： Christopher Harris ,  Thomas Gehrke ,  T. Warren Weeks, Jr. ,  Cem Basceri ,  Elif Berkman

    IPC分类号： H01L21/338

    CPC分类号： H01L29/7783 ,  H01L29/2003

    摘要： A method of compensating resistivity of a near-surface region of a substrate includes epitaxially growing a buffer layer on the substrate, wherein the buffer is grown as having a dopant concentration as dependent on resistivity and conductivity of the substrate, so as to deplete residual or excess charge within the near-surface region of the substrate. The dopant profile of the buffer layer be smoothly graded, or may consist of sub-layers of different dopant concentration, to also provide a highly resistive upper portion of the buffer layer ideal for subsequent device growth. Also, the buffer layer may be doped with carbon, and aluminum may be used to getter the carbon during epitaxial growth.

    摘要翻译： 补偿衬底的近表面区域的电阻率的方法包括在衬底上外延生长缓冲层，其中缓冲液生长为具有取决于衬底的电阻率和导电性的掺杂剂浓度，从而消耗残余或 在基板的近表面区域内的过量电荷。 缓冲层的掺杂剂分布平滑地分级，或者可以由不同掺杂剂浓度的子层构成，还提供缓冲层的高度电阻上部，对于随后的器件生长是理想的。 此外，缓冲层可以掺杂碳，并且可以在外延生长期间使用铝来吸收碳。

    Gallium nitride based high-electron mobility devices
    2.
    发明授权
    Gallium nitride based high-electron mobility devices 有权
    基于氮化镓的高电子迁移率器件

    公开(公告)号：US07326971B2

    公开(公告)日：2008-02-05

    申请号：US11147341

    申请日：2005-06-08

    申请人： Christopher Harris ,  Thomas Gehrke ,  T. Warren Weeks, Jr. ,  Cem Basceri

    发明人： Christopher Harris ,  Thomas Gehrke ,  T. Warren Weeks, Jr. ,  Cem Basceri

    IPC分类号： H01L29/778

    CPC分类号： H01L29/7783 ,  H01L29/2003

    摘要： A heterojunction device includes a first layer of p-type aluminum gallium nitride; a second layer of undoped gallium nitride on the first layer; a third layer of aluminum gallium nitride on the second layer; and an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.

    摘要翻译： 异质结装置包括第一层p型氮化铝镓; 在第一层上的第二层未掺杂的氮化镓; 在第二层上的第三层氮化铝镓; 以及在第二和第三层之间的电子气体。 第一和第二层之间的异质结将正电荷注入第二层以补偿和/或中和电子气中的负电荷。

    Method of manufacturing gallium nitride based high-electron mobility devices
    3.
    发明授权
    Method of manufacturing gallium nitride based high-electron mobility devices 有权
    制造氮化镓基高电子迁移率器件的方法

    公开(公告)号：US07364988B2

    公开(公告)日：2008-04-29

    申请号：US11147342

    申请日：2005-06-08

    申请人： Christopher Harris ,  Thomas Gehrke ,  T. Warren Weeks, Jr. ,  Cem Basceri

    发明人： Christopher Harris ,  Thomas Gehrke ,  T. Warren Weeks, Jr. ,  Cem Basceri

    IPC分类号： H01L21/20

    CPC分类号： H01L29/7783 ,  H01L29/2003

    摘要： A method of manufacturing a heterojunction device includes forming a first layer of p-type aluminum gallium nitride; forming a second layer of undoped gallium nitride on the first layer; and forming a third layer of aluminum gallium nitride on the second layer, to provide an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.

    摘要翻译： 异质结装置的制造方法包括：形成第一层p型氮化镓铝; 在第一层上形成第二层未掺杂的氮化镓层; 以及在所述第二层上形成第三氮化镓层，以在所述第二层和所述第三层之间提供电子气。 第一和第二层之间的异质结将正电荷注入第二层以补偿和/或中和电子气中的负电荷。

    Method of manufacturing an adaptive AlGaN buffer layer
    4.
    发明申请
    Method of manufacturing an adaptive AlGaN buffer layer 有权
    制造自适应AlGaN缓冲层的方法

    公开(公告)号：US20060281238A1

    公开(公告)日：2006-12-14

    申请号：US11474431

    申请日：2006-06-26

    申请人： Christopher Harris ,  Thomas Gehrke ,  T. Weeks ,  Cem Basceri ,  Elif Berkman

    发明人： Christopher Harris ,  Thomas Gehrke ,  T. Weeks ,  Cem Basceri ,  Elif Berkman

    IPC分类号： H01L21/338

    CPC分类号： H01L29/7783 ,  H01L29/2003

    摘要： A method of compensating resistivity of a near-surface region of a substrate includes epitaxially growing a buffer layer on the substrate, wherein the buffer is grown as having a dopant concentration as dependent on resistivity and conductivity of the substrate, so as to deplete residual or excess charge within the near-surface region of the substrate. The dopant profile of the buffer layer be smoothly graded, or may consist of sub-layers of different dopant concentration, to also provide a highly resistive upper portion of the buffer layer ideal for subsequent device growth. Also, the buffer layer may be doped with carbon, and aluminum may be used to getter the carbon during epitaxial growth.

    摘要翻译： 补偿衬底的近表面区域的电阻率的方法包括在衬底上外延生长缓冲层，其中缓冲液生长为具有取决于衬底的电阻率和导电性的掺杂剂浓度，从而消耗残余或 在基板的近表面区域内的过量电荷。 缓冲层的掺杂剂分布平滑地分级，或者可以由不同掺杂剂浓度的子层构成，还提供缓冲层的高度电阻上部，对于随后的器件生长是理想的。 此外，缓冲层可以掺杂碳，并且可以在外延生长期间使用铝来吸收碳。

    Method of manufacturing gallium nitride based high-electron mobility devices
    7.
    发明申请
    Method of manufacturing gallium nitride based high-electron mobility devices 有权
    制造氮化镓基高电子迁移率器件的方法

    公开(公告)号：US20060281284A1

    公开(公告)日：2006-12-14

    申请号：US11147342

    申请日：2005-06-08

    申请人： Christopher Harris ,  Thomas Gehrke ,  T. Weeks ,  Cem Basceri

    发明人： Christopher Harris ,  Thomas Gehrke ,  T. Weeks ,  Cem Basceri

    IPC分类号： H01L21/20

    CPC分类号： H01L29/7783 ,  H01L29/2003

    摘要： A method of manufacturing a heterojunction device includes forming a first layer of p-type aluminum gallium nitride; forming a second layer of undoped gallium nitride on the first layer; and forming a third layer of aluminum gallium nitride on the second layer, to provide an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.

    摘要翻译： 异质结装置的制造方法包括：形成第一层p型氮化镓铝; 在第一层上形成第二层未掺杂的氮化镓层; 以及在所述第二层上形成第三氮化镓层，以在所述第二层和所述第三层之间提供电子气。 第一和第二层之间的异质结将正电荷注入第二层以补偿和/或中和电子气中的负电荷。

    Gallium nitride based high-electron mobility devices
    8.
    发明申请
    Gallium nitride based high-electron mobility devices 有权
    基于氮化镓的高电子迁移率器件

    公开(公告)号：US20060278892A1

    公开(公告)日：2006-12-14

    申请号：US11147341

    申请日：2005-06-08

    申请人： Christopher Harris ,  Thomas Gehrke ,  T. Weeks ,  Cem Basceri

    发明人： Christopher Harris ,  Thomas Gehrke ,  T. Weeks ,  Cem Basceri

    IPC分类号： H01L29/739

    CPC分类号： H01L29/7783 ,  H01L29/2003

    摘要： A heterojunction device includes a first layer of p-type aluminum gallium nitride; a second layer of undoped gallium nitride on the first layer; a third layer of aluminum gallium nitride on the second layer; and an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.

    摘要翻译： 异质结装置包括第一层p型氮化铝镓; 在第一层上的第二层未掺杂的氮化镓; 在第二层上的第三层氮化铝镓; 以及在第二和第三层之间的电子气体。 第一和第二层之间的异质结将正电荷注入第二层以补偿和/或中和电子气中的负电荷。

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07728403B2

    公开(公告)日：2010-06-01

    申请号：US11444106

    申请日：2006-05-31

    申请人： Christopher Harris ,  Cem Basceri ,  Kent Bertilsson

    发明人： Christopher Harris ,  Cem Basceri ,  Kent Bertilsson

    IPC分类号： H01L29/47

    CPC分类号： H01L29/872 ,  H01L21/8213 ,  H01L27/0255 ,  H01L27/0814 ,  H01L29/0619 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/8611

    摘要： A semiconductor device of unipolar type has Schottky-contacts (6) laterally separated by regions in the form of additional layers (7, 7″) of semiconductor material on top of a drift layer (3). Said additional layers being doped according to a conductivity type being opposite to the one of the drift layer. At least one (7″) of the additional layers has a substantially larger lateral extension and thereby larger area of the interface to the drift layer than adjacent such layers (7) for facilitating the building-up of a sufficient voltage between that layer and the drift layer for injecting minority charge carriers into the drift layer upon surge for surge protection.

    摘要翻译： 单极型半导体器件具有由漂移层（3）顶部上的半导体材料附加层（7,7“）形式的区域横向隔开的肖特基触点（6）。 所述附加层根据与漂移层中的一个相反的导电类型被掺杂。 至少一个（7“）附加层具有相对较大的侧向延伸，从而与相邻的这些层（7）相比，漂移层的界面的面积更大，以便于在该层和第二层之间建立足够的电压 漂移层，用于在电涌保护时将少数电荷载体注入漂移层。

    Semiconductor device comprising a junction having a plurality of rings
    10.
    发明授权
    Semiconductor device comprising a junction having a plurality of rings 有权
    包括具有多个环的结的半导体器件

    公开(公告)号：US07768092B2

    公开(公告)日：2010-08-03

    申请号：US11185106

    申请日：2005-07-20

    申请人： Christopher Harris ,  Cem Basceri

    发明人： Christopher Harris ,  Cem Basceri

    IPC分类号： H01L29/47

    CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/66143

    摘要： A semiconductor device comprises a first layer (1) of a wide band gap semiconductor material doped according to a first conductivity type and a second layer (3) on top thereof designed to form a junction blocking current in the reverse biased state of the device at the interface to said first layer. The device comprises extension means for extending a termination of the junction laterally with respect to the lateral border (6) of the second layer. This extension means comprises a plurality of rings (16-21) in juxtaposition laterally surrounding said junction (15) and being arranged as seen in the lateral direction away from said junction alternatively a ring (16-18) of a semiconductor material of a second conductivity type opposite to that of said first layer and a ring (19-21) of a semi-insulating material.

    摘要翻译： 半导体器件包括根据第一导电类型掺杂的宽带隙半导体材料的第一层（1）和在其顶部上的第二层（3），其设计成在器件的反向偏压状态下形成结阻滞电流 与所述第一层的接口。 该装置包括用于相对于第二层的侧边缘（6）横向延伸接头终端的延伸装置。 这种延伸装置包括多个并排的环（16-21），其横向围绕所述接合部（15）并且沿横向方向远离所述接头交替布置，交替地布置为第二部分的半导体材料的环（16-18） 与所述第一层相反的导电类型和半绝缘材料的环（19-21）。