发明授权
- 专利标题： Substrate processing apparatus and substrate processing method
- 专利标题（中）： 基板加工装置及基板处理方法
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申请号： US11327310申请日： 2006-01-09
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公开(公告)号： US07329616B2公开(公告)日： 2008-02-12
- 发明人: Takehiko Orii , Masaru Amai
- 申请人： Takehiko Orii , Masaru Amai
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Smith, Gambrell & Russell, LLP
- 优先权： JP2001-265648 20010903
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A substrate processing apparatus and a substrate processing method are provided wherein an oxide film which is thinner than the conventional films can be formed with uniform thickness when forming an oxide film on the front-side surface of a substrate.A substrate processing apparatus (12) for processing a substrate (W) by feeding a processing liquid comprises: a temperature regulator (133) to regulate the temperature of said processing liquid; and a underplate temperature adjuster (115) to adjust the temperature of an underplate (77) which is placed in proximity to the backside surface of said substrate W.