发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11479802申请日： 2006-06-30
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公开(公告)号： US07329985B2公开(公告)日： 2008-02-12
- 发明人: Shunpei Yamazaki , Yuugo Goto , Yoshifumi Tanada
- 申请人： Shunpei Yamazaki , Yuugo Goto , Yoshifumi Tanada
- 申请人地址： JP
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP
- 代理机构： Cook, Alex, McFarron, Manzo, Cummings & Mehler, Ltd.
- 优先权： JP2002-233953 20020809
- 主分类号： H05B33/12
- IPC分类号： H05B33/12
摘要：
A self-light emitting display device with top-emission usually has no film that is capable of light shielding. Therefore, it is necessary to form a light-shielding layer additionally with, which leads the number of processes to increase.In the present invention, plural films selected from a first coloring layer 161, a second coloring layer 162, and a third coloring layer 163 formed on an opposing substrate are laminated to form a light-shielding portion without using a light-shielding mask.
公开/授权文献
- US20060250073A1 Semiconductor device and manufacturing method thereof 公开/授权日：2006-11-09
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